X-On Electronics has gained recognition as a prominent supplier of MBR1035G schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR1035G schottky diodes & rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

MBR1035G ON Semiconductor

MBR1035G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.MBR1035G
Manufacturer: ON Semiconductor
Category:Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A 35V
Datasheet: MBR1035G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.4967
10 : USD 0.4229
100 : USD 0.4012
500 : USD 0.3902
1000 : USD 0.3824
N/A

Obsolete
0 - WHS 2

MOQ : 50
Multiples : 50
50 : USD 0.3728
200 : USD 0.3342
1000 : USD 0.3214
2000 : USD 0.3085
6250 : USD 0.3085
N/A

Obsolete
0 - WHS 3

MOQ : 1132
Multiples : 1132
1132 : USD 0.3836
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 1.8725
10 : USD 0.9006
100 : USD 0.4637
500 : USD 0.3986
1000 : USD 0.344
3000 : USD 0.3281
6000 : USD 0.3184
N/A

Obsolete
0 - WHS 5

MOQ : 27
Multiples : 27
27 : USD 0.2486
N/A

Obsolete
0 - WHS 6

MOQ : 27
Multiples : 1
27 : USD 0.2538
N/A

Obsolete
0 - WHS 7

MOQ : 24
Multiples : 1
24 : USD 0.2794
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the MBR1035G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR1035G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

MBR1035, MBR1045 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage MBR1035, MBR1045 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage MBR1035 V 35 R MBR1045 45 Average Rectified Forward Current I A F(AV) (T = 135C, Per Device) 10 C Peak Repetitive Forward Current, I 10 A FRM (Square Wave, 20 kHz, T = 135C) C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change dv/dt V/ s (Rated V ) 10,000 R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction toAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit C/W Maximum Thermal Resistance, Junction toCase Min. Pad R 2.0 JC Maximum Thermal Resistance, Junction toAmbient Min. Pad R 60 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.55 0.57 F j (i = 20 Amps, Tj = 125C) 0.67 0.72 F (i = 20 Amps, Tj = 25C) 0.78 0.84 F Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, Tj = 125C) 5.3 15 (Rated dc Voltage, Tj = 25C) 0.008 0.1 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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