MBR1080G ON Semiconductor

MBR1080G electronic component of ON Semiconductor
MBR1080G ON Semiconductor
MBR1080G Schottky Diodes & Rectifiers
MBR1080G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MBR1080G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR1080G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. MBR1080G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10A 80V
Datasheet: MBR1080G Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 400
Multiples : 400
QtyUnit Price
400$ 1.0319
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Obsolete

Availability 0
MOQ : 1100
Multiples : 1100
QtyUnit Price
1100$ 0.4288
2200$ 0.4288
3300$ 0.4288
4400$ 0.4288
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Obsolete

Availability 0
MOQ : 1
Multiples : 50
QtyUnit Price
1$ 35.2646
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Availability 0
MOQ : 785
Multiples : 1
QtyUnit Price
785$ 0.4028
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Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.567
10$ 1.2656
50$ 1.0341
100$ 0.94
500$ 0.7981
1100$ 0.6853
2200$ 0.6512
5500$ 0.65
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3271
3$ 1.1941
10$ 1.0543
18$ 0.8685
50$ 0.821
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2042
10$ 1.9447
50$ 1.7819
100$ 1.6154
500$ 1.5398
1000$ 1.5071
N/A

Obsolete

Availability 0
MOQ : 11
Multiples : 1
QtyUnit Price
11$ 0.6969
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBR1080G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR1080G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR1080G, MBR1090G, MBR10100G, NRVB10100G SWITCHMODE MBR1080G, MBR1090G, MBR10100G, NRVB10100G MAXIMUM RATINGS MBR/NRVB Rating Symbol Unit 1080 1090 10100 Peak Repetitive Reverse Voltage V 80 90 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Rated V ) T = 133C I 10 A R C F(AV) Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 133C 20 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient R 60 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.7 F C (i = 10 Amps, T = 25C) 0.8 F C (i = 20 Amps, T = 125C) 0.85 F C (i = 20 Amps, T = 25C) 0.95 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 6.0 C (Rated dc Voltage, T = 25C) 0.10 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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