MMBV105GLT1G

MMBV105GLT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods. Features MMBV105GLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V 30 Vdc (BR)R (I = 10 Adc) R Reverse Voltage Leakage Current I 50 nAdc R (V = 28 Vdc) R C Q C T R V = 25 Vdc, f = 1.0 MHz V = 3.0 Vdc C /C R R 3 25 Device Type pF f = 50 MHz f = 1.0 MHz Min Max Typ Min Max MMBV105GLT1 1.5 2.8 250 4.0 6.5 TYPICAL CHARACTERISTICS 20 1000 18 16 V = 3 Vdc R 14 T = 25C A 12 10 100 8.0 6.0 f = 1.0 MHz T = 25C A 4.0 2.0 0 10 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 100 1000 V , REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) R Figure 1. Diode Capacitance Figure 2. Figure of Merit 1.04 V = 3.0 Vdc R 1.03 f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 T , AMBIENT TEMPERATURE (C) A Figure 3. Diode Capacitance