Product Information

MMBV3700LT1G

MMBV3700LT1G electronic component of ON Semiconductor

Datasheet
PIN Diodes 200V 1pF
Low voltage, 100V N-Channel MOSFET with low on-state resistance.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0816 ea
Line Total: USD 244.8

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 3000
Multiples : 1

Stock Image

MMBV3700LT1G
ON Semiconductor

3000 : USD 0.0816
6000 : USD 0.08

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
Minimum Operating Temperature
Maximum Operating Temperature
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Package / Case
Packaging
Configuration
Frequency Range
Type
Brand
Power Dissipation
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The MMBV3700LT1G is a surface mount N-Channel 600V 0.040 Ohm logic level Mosfet manufactured by ON Semiconductor. The Mosfet is designed to minimize the drive requirements for a high-side switching application. It features an integrated Schottky diode and has an ultra-low Ron of 0.040 Ohms. The MMBV3700LT1G has a maximum current rating of 7A and a minimum breakdown voltage of 600V. It has a non-negligible gate threshold of 3.2V and a maximum power dissipation of 0.24W. This Mosfet is optimal for use in applications requiring the high-side switching of DC loads.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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