Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA130LT3G, NRVBA130LT3G, www.onsemi.com NRVBA130LN This device employs the Schottky Barrier principle in a SCHOTTKY BARRIER metaltosilicon power rectifier. Features epitaxial construction with RECTIFIER oxide passivation and metal overlay contact. Ideally suited for low 1.0 AMPERES, 30 VOLTS voltage, high frequency switching power supplies free wheeling diodes and polarity protection diodes. Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction SMA Guardring for OverVoltage Protection CASE 403D PLASTIC Low Forward Voltage Drop NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING DIAGRAM Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS B1L3 Compliant AYWW Mechanical Characteristics: Case: Molded Epoxy B1L3 = Specific Device Code Epoxy Meets UL 94 V0 0.125 in A = Assembly Location*** Weight: 70 mg (approximately) Y = Year WW = Work Week Finish: All External Surfaces Corrosion Resistant and Terminal = PbFree Package Leads are Readily Solderable (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: ***The Assembly Location code (A) is front side 260C Max. for 10 Seconds optional. In cases where the Assembly Location is Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or stamped in the package bottom (molding ejecter pin), Polarity Band the front side assembly code may be blank. Device Meets MSL1 Requirements ESD Ratings: ORDERING INFORMATION Machine Model = C (> 400 V) Package Shipping Device Human Body Model = 3B (> 8000 V) MBRA130LT3G SMA 5,000 / (PbFree) Tape & Reel ** SMA 5,000 / NRVBA130LT3G* (PbFree) Tape & Reel ** SMA 5,000 / NRVBA130LNT3G* (PbFree) Tape & Reel ** ** 12 mm Tape, 13 Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: December, 2019 Rev. 10 MBRA130LT3/DMBRA130LT3G, NRVBA130LT3G, NRVBA130LN MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 105C) 1.0 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 100 kHz, T = 105C) 2.0 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 25 Storage Temperature T 55 to +150 C stg Operating Junction Temperature T 55 to +125 C J Voltage Rate of Change, (Rated V , T = 25C) dv/dt 10,000 V/ s R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Value Unit Characteristic Thermal Resistance JunctiontoLead (Note 1) 35 C/W R JL Thermal Resistance JunctiontoAmbient (Note 1) R JA 86 1. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Value Unit Characteristic V T = 25C T = 100C Volts Maximum Instantaneous Forward Voltage (Note 2) F J J 0.41 0.35 (I = 1.0 A) see Figure 2 F 0.47 0.43 (I = 2.0 A) F I T = 25C T = 100C mA Maximum Instantaneous Reverse Current R J J 1.0 25 (V = 30 V) see Figure 4 R 0.4 12 (V = 15 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2