NSVMMBD352WT1G ON Semiconductor

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultrafast switching circuits. MMBD352WT1G, NSVMMBD352WT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Forward Voltage V V F (I = 10 mAdc) 0.60 F Reverse Voltage Leakage Current I A R (V = 3.0 V) 0.25 R (V = 7.0 V) 10 R Capacitance C pF (V = 0 V, f = 1.0 MHz) 1.0 R TYPICAL CHARACTERISTICS 1.0 100 T = 85C A 0.9 10 T = -40C A 0.8 1.0 T = 25C A 0.7 0.1 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 4.0 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Capacitance