DATA SHEET www.onsemi.com General Purpose Transistor COLLECTOR 3 PNP Silicon 1 BASE MMBT2907AWT1G, NSVMMBT2907AWT1G 2 EMITTER These transistors are designed for general purpose amplifier applications. They are housed in the SC70/SOT323 package which is designed for low power surface mount applications. 3 SC 70/SOT323 Features CASE 419 04 NSV Prefix for Automotive and Other Applications Requiring 1 STYLE 3 2 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable MARKING DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 20 M MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector Emitter Voltage V 60 Vdc CEO 20 = Specific Device Code M = Date Code Collector Base Voltage V 60 Vdc CBO = PbFree Package Emitter Base Voltage V 5.0 Vdc EBO (Note: Microdot may be in either location) Collector Current Continuous I 600 mAdc C *Date Code orientation may vary depending upon THERMAL CHARACTERISTICS manufacturing location. Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 150 mW D ORDERING INFORMATION (Note 1) T = 25C A Device Package Shipping Thermal Resistance JunctiontoAmbient R 833 C/W JA MMBT2907AWT1G SC70 3000 Tape & Junction and Storage Temperature T , T 55 to C J stg (PbFree) Reel +150 NSVMMBT2907AWT1G SC70 3000 Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. FR5 = 1.0 x 0.75 x 0.062 in. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 9 MMBT2907AWT1/DMMBT2907AWT1G, NSVMMBT2907AWT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 2) V 60 Vdc (BR)CEO (I = 10 mAdc, I = 0) C B Collector Base Breakdown Voltage V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Base Cutoff Current I 50 nAdc BL (V = 30 Vdc, V = 0.5 Vdc) CE EB(off) Collector Cutoff Current I 50 nAdc CEX (V = 30 Vdc, V = 0.5 Vdc) CE EB(off) (3) ON CHARACTERISTICS DC Current Gain (Note 2) H FE (I = 0.1 mAdc, V = 10 Vdc) 75 C CE (I = 1.0 mAdc, V = 10 Vdc) 100 C CE (I = 10 mAdc, V = 10 Vdc) 100 C CE (I = 150 mAdc, V = 10 Vdc) 100 340 C CE (I = 500 mAdc, V = 10 Vdc) 50 C CE Collector Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 1.6 C B Base Emitter Saturation Voltage (Note 2) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 1.3 C B (I = 500 mAdc, I = 50 mAdc) 2.6 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 200 MHz T (I = 50 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance C 8.0 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 30 pF ibo (V = 2.0 Vdc, I = 0, f = 1.0 MHz) EB C SWITCHING CHARACTERISTICS TurnOn Time t 45 on (V = 30 Vdc, CC Delay Time t 10 d I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 40 r ns Storage Time t 80 s (V = 6.0 Vdc, I = 150 mAdc, CC C Fall Time t 30 f I = I = 15 mAdc) B1 B2 TurnOff Time t 100 off Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. INPUT INPUT +15 V -6.0 V -30 V Z = 50 Z = 50 o o PRF = 150 PPS PRF = 150 PPS 200 1.0 k 37 RISE TIME 2.0 ns RISE TIME 2.0 ns P.W. < 200 ns P.W. < 200 ns 1.0 k 1.0 k TO OSCILLOSCOPE TO OSCILLOSCOPE 0 0 RISE TIME 5.0 ns RISE TIME 5.0 ns 50 -16 V -30 V 50 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit www.onsemi.com 2