NSVR0230M2T5G ON Semiconductor

NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature NSR0230M2T5G, NSVR0230M2T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 10 R (V = 30 V) 100 R Forward Voltage V Vdc F (I = 10 mA) 0.325 F (I = 200 mA) 0.500 F 1 10m T = 125C A 1m 100m T = 125C A 100 T = 75C A 10m T = 75C A 10 1m T = 25C 1 A 100 T = 25C 100n A T = 25C 10 A 10n T = 25C A 1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0 510 15 20 25 30 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 510 15 20 25 30 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Total Capacitance