NSR0620P2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0620P2 in a SOD 923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 20 V SCHOTTKY Very Low Forward Voltage Drop 350 mV 100 mA BARRIER DIODE Low Reverse Current 2.0 A 10 V Continuous Forward Current 500 mA Power Dissipation with Minimum Trace 190 mW Very High Switching Speed 4.0 ns 10 mA 1 2 CATHODE ANODE Low Capacitance 12 pF 1.0 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING 2 DIAGRAM Typical Applications LCD and Keypad Backlighting 1 Camera Photo Flash M SOD923 Buck and Boost dcdc Converters CASE 514AB 12 Reverse Voltage and Current Protection F = Specific Device Code Clamping & Protection M = Month Code Markets Mobile Handsets ORDERING INFORMATION MP3 Players Digital Camera and Camcorders Device Package Shipping Notebook PCs & PDAs NSR0620P2T5G SOD923 2 mm Pitch GPS (PbFree) 8000/Tape & Reel For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. Reverse Voltage V 20 Vdc R Forward Continuous Current (DC) I 500 mA F NonRepetitive Peak Forward Surge I 1.0 A FSM Current ESD Rating: Human Body Model ESD Class 3B Machine Model Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2019 Rev. 4 NSR0620P2/D FNSR0620P2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation T = 25C P 190 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 570 mW A D Junction Operating and Storage Temperature Range T , T 55 to +125 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 2.0 10 R (V = 20 V) 9.0 R Forward Voltage V mV F (I = 10 mA) 270 310 F (I = 100 mA) 350 390 F (I = 500 mA) 480 520 F Total Capacitance 12 pF CT (V = 1.0 V, f = 1 MHz) R Reverse Recovery Time t 4.0 ns rr (I = I = 10 mA, I = 1.0 mA) F R R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + t t r p 0.1 F 0 V 10% I 90% F 750 H V R 0.1 F 50 Output Pulse Generator Pulse Output Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. I is measured at 1 mA. Typically 0.1 X I or 0.25 X I . R(REC) RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2