BAV70W, SBAV70W Dual Switching Diode Common Cathode Features S Prefix for Automotive and Other Applications Requiring Unique wwwwww..onsemi.comonsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* SOT323 MAXIMUM RATINGS (T = 25C) A CASE 419 STYLE 5 Rating Symbol Max Unit Reverse Voltage V 100 V R ANODE Forward Current I 200 mA F 1 3 Peak Forward Surge Current I 500 mA FM(surge) 2 CATHODE Forward Surge Current I 2.0 A ANODE FSM (60 Hz 1 cycle) MARKING DIAGRAM Repetitive Peak Forward Current I 0.7 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not A4 M be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 12 Total Device Dissipation FR5 Board P 200 mW D A4 = Specific Device Code (Note 1) M = Date Code T = 25C A = PbFree Package Derate above 25C 1.6 mW/C (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 625 C/W JA Total Device Dissipation P 300 mW D ORDERING INFORMATION Alumina Substrate (Note 2) T = 25C A Derate above 25C 2.4 mW/C Device Package Shipping BAV70WT1G SOT323 3,000 / Tape & Reel Thermal Resistance, JunctiontoAmbient R 417 C/W JA (PbFree) Junction and Storage Temperature T , T 55 to C J stg SBAV70WT1G SOT323 3,000 / Tape & Reel +150 (PbFree) 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 Publication Order Number: 1 June, 2017 Rev. 9 BAV70WT1/DBAV70W, SBAV70W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR) (I = 100 A) 100 (BR) Reverse Voltage Leakage Current (Note 3) I R (V = 100 V) 1.0 A R (V = 50 V) 100 nA R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 1.5 R Reverse Recovery Time t ns rr (I = I = 10 mA, R = 100 , I = 1.0 mA) (Figure 1) 6.0 F R L R(REC) Forward Recovery Voltage V V RF (I = 10 mA, t = 20 ns) (Figure 2) 1.75 F r Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. www.onsemi.com 2