DATA SHEET www.onsemi.com General Purpose COLLECTOR Transistors 3 PNP Silicon 1 BASE BC807-16L, BC807-25L, 2 BC807-40L EMITTER Features S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant SOT23 CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM Collector Emitter Voltage V 45 V CEO Collector Base Voltage V 50 V CBO 5xx M Emitter Base Voltage V 5.0 V EBO Collector Current Continuous I 500 mAdc C 1 THERMAL CHARACTERISTICS 5xx = Device Code Characteristic Symbol Max Unit xx = A1, B1, or C Total Device Dissipation FR5 Board, P M = Date Code* D (Note 1) T = 25C 225 mW =PbFree Package A Derate above 25C 1.8 mW/C (Note: Microdot may be in either location) Thermal Resistance, R 436 C/W *Date Code orientation and/or overbar may JA JunctiontoAmbient (Note 1) vary depending upon manufacturing location. Total Device Dissipation Alumina P D Substrate, (Note 1) T = 25C 300 mW A ORDERING INFORMATION Derate above 25C 2.4 mW/C See detailed ordering and shipping information on page 2 of Thermal Resistance, R 417 C/W this data sheet. JA JunctiontoAmbient (Note 2) Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 Board, 1 oz. Cu, 100mm . 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: October, 2021 Rev. 16 BC80716LT1/DBC80716L, BC80725L, BC80740L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB J ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC80716, SBC8016L 100 250 C CE BC80725, SBC80725L 160 400 BC80740, SBC80740L 250 600 (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC80716LT1G 5A1 3000 / Tape & Reel SBC80716LT1G* BC80716LT3G 5A1 10,000 / Tape & Reel SBC80716LT3G* BC80725LT1G 5B1 3000 / Tape & Reel SBC80725LT1G* SOT23 (PbFree) BC80725LT3G 5B1 10,000 / Tape & Reel SBC80725LT3G* BC80740LT1G 5C 3000 / Tape & Reel SBC80740LT1G* BC80740LT3G 5C 10,000 / Tape & Reel SBC80740LT3G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC Q101 Qualified and PPAP Capable. www.onsemi.com 2