CM CM50E3U-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Chopper IGBTMOD U-Series Module 50 Amperes/1200 Volts A N D P - NUTS (3 PLACES) Q - .47 12mm DEEP (2 PLACES) E H C2E1 E2 C1 F B G Description: Powerex Chopper IGBTMOD M K K J R Modules are designed for use in switching applications. Each module consists of one IGBT Transistor 110 T U T having a reverse-connected super- TAB fast recovery free-wheel diode and S an anode-collector connected super- C fast recovery free-wheel diode. All L components and interconnects are isolated from the heat sinking base- plate, offering simplified system assembly and thermal management. G2 Features: E2 h Low Drive Power h Low V C2E1 CE(sat) C1 E2 h Discrete Super-Fast Recovery Free-Wheel Diode h High Frequency Operation (15-20kHz) h Isolated Baseplate for Easy Outline Drawing and Circuit Diagram Heat Sinking Dimensions Inches Millimeters Dimensions Inches Millimeters Applications: A 3.70 94.0 L 0.84 21.2 h DC Motor Control B 1.89 48.0 M 0.67 17.0 h Boost Regulator C 1.18 +0.04/-0.02 30.0 +1.0/-0.5 N 0.28 7.0 Ordering Information: D 3.150.01 80.00.25 PM5 M5 Example: Select the complete E 0.43 11.0 Q 0.26 Dia. 6.5 Dia. module number you desire from F 0.16 4.0 R 0.02 4.0 the table - i.e. CM50E3U-24H is a 1200V (V ), 50 Ampere Chopper G 0.51 13.0 S 0.30 7.5 CES IGBTMOD Power Module. H 0.02 0.5 T 0.63 16.0 J 0.53 13.5 U 0.98 25.0 Current Rating V CES Type Amperes Volts (x 50) K 0.91 23.0 CM 50 24 127127 E2 G2Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50E3U-24H Chopper IGBTMOD U-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM50E3U-24H Units Junction Temperature T -40 to 150 C j Storage Temperature T -40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage (C-E SHORT) V 20 Volts GES Collector Current (T = 25C) I 50 Amperes c C Peak Collector Current I 100* Amperes CM Emitter Current** (T = 25C) I 50 Amperes c E Peak Emitter Current** I 100* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 400 Watts c j c Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts iso * Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1 mA CES CE CES GE Gate Leakage Voltage I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 5mA, V = 10V 4.5 6 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 50A, V = 15V, T = 25C 2.9 3.7 Volts CE(sat) C GE j I = 50A, V = 15V, T = 125C 2.85 Volts C GE j Total Gate Charge Q V = 600V, I = 50A, V = 15V 187 nC G CC C GE Emitter-Collector Voltage** V I = 50A, V = 0V 3.2 Volts EC E GE Emitter-Collector Voltage V I = 50A, Clamp Diode Part 3.2 Volts FM F **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 7.5 nf ies Output Capacitance C V = 10V, V = 0V 2.6 nf oes CE GE Reverse Transfer Capacitance C 1.5 nf res Resistive Turn-on Delay Time t V = 600V, I = 50A, 80 ns d(on) CC C Load Rise Time t V = V = 15V, 200 ns r GE1 GE2 Switch Turn-off Delay Time t R = 6.3V, Resistive 150 ns d(off) G Times Fall Time t Load Switching Operation 350 ns f Diode Reverse Recovery Time** t I = 50A, di /dt = -100A/s 300 ns rr E E Diode Reverse Recovery Charge** Q I = 50A, di /dt = -100A/s 0.28 C rr E E Diode Reverse Recovery Time t I = 50A, Clamp Diode Part, 300 ns rr F Diode Reverse Recovery Charge Q di /dt = -100A/s 0.28 C rr F **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 128128