Product Information

CM600HA-24H

CM600HA-24H electronic component of Powerex

Datasheet
Trans IGBT Module N-CH 1.2KV 600A 4-Pin

Manufacturer: Powerex
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 453.5985 ea
Line Total: USD 453.6

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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CM600HA-24H
Powerex

1 : USD 453.5985

     
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CM600HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD H-Series Module 600 Amperes/1200 Volts A C Y - THD (2 TYP.) M E C E P B D E U R G T Description: V - THD (2 TYP.) Powerex IGBTMOD Modules are designed for use in switching Q applications. Each module consists L G N X - DIA. of one IGBT Transistor in a single (4 TYP.) Z configuration with a reverse- J J connected super-fast recovery S free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- F H K bly and thermal management. Features: h Low Drive Power W h Low V CE(sat) h Discrete Super-Fast Recovery (135ns) Free-Wheel Diode h High Frequency Operation E C (20-25kHz) h Isolated Baseplate for Easy E Heat Sinking G Applications: h AC Motor Control Outline Drawing and Circuit Diagram h Motion/Servo Control Dimensions Inches Millimeters Dimensions Inches Millimeters h UPS A 4.33 110.0 N 0.69 17.5 h Welding Power Supplies h Laser Power Supplies B 3.15 80.0 P 0.61 15.5 C 3.660.008 93.00.25 Q 0.51 13.0 Ordering Information: D 2.440.008 62.00.25 R 0.49 12.5 Example: Select the complete part E 1.57 40.0 S 0.45 11.5 module number you desire from the table below -i.e. CM600HA-24H F 1.42 Max. 36.0 Max. T 0.43 11.0 is a 1200V (V ), 600 Ampere CES G 1.14 29.0 U 0.35 9.0 Single IGBTMOD Power Module. H 1.00 Max. 25.5 Max. V M8 Metric M8 Type Current Rating V CES J 0.96 25.0 W 0.28 7.0 Amperes Volts (x 50) K 0.94 24.5 X 0.256 Dia. Dia. 6.50 CM 600 24 L 0.83 21.0 Y M4 Metric M4 M 0.71 18.0 Z 0.12 3.04 193Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24H Single IGBTMOD H-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM600HA-24H Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage V 20 Volts GES Collector Current I 600 Amperes C Peak Collector Current I 1200* Amperes CM Diode Forward Current I 600 Amperes F Diode Forward Surge Current I 1200* Amperes FM Power Dissipation P 4100 Watts d Max. Mounting Torque M8 Terminal Screws 95 in-lb Max. Mounting Torque M6 Mounting Screws 26 in-lb Module Weight (Typical) 560 Grams V Isolation V 2500 Volts RMS * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 2.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 60mA, V = 10V 4.5 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 600A, V = 15V 2.5 3.4** Volts CE(sat) C GE I = 600A, V = 15V, T = 150C 2.25 Volts C GE j Total Gate Charge Q V = 600V, I = 600A, V = 15V 3000 nC G CC C GS Diode Forward Voltage V I = 600A, V = 0V 3.5 Volts FM E GS ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 120 nF ies Output Capacitance C V = 0V, V = 10V, f = 1MHz 42 nF oes GE CE Reverse Transfer Capacitance C 24 nF res Resistive Turn-on Delay Time t 300 ns d(on) Load Rise Time t V = 600V, I = 600A, 700 ns r CC C Switching Turn-off Delay Time t V = V = 15V, R = 2.1 450 ns d(off) GE1 GE2 G Times Fall Time t 350 ns f Diode Reverse Recovery Time t I = 600A, di /dt = 1200A/s 250 ns rr E E Diode Reverse Recovery Charge Q I = 600A, di /dt = 1200A/s 4.46 C rr E E Thermal and Mechanical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R Per IGBT 0.035 C/W th(j-c) Thermal Resistance, Junction to Case R Per FWDi 0.06 C/W th(j-c) Contact Thermal Resistance R Per Module, Thermal Grease Applied 0.035 C/W th(c-f) 194

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