ESD Product Specification PE42521 UltraCMOS SPDT RF Switch 9 kHz 13 GHz Product Description Features The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless HaRP technology enhanced applications. This broadband general purpose switch Fast settling time of 2 s maintains excellent RF performance and linearity from No gate and phase lag 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with fast switching time and No drift in insertion loss and phase higher power handling of 36 dBm continuous wave (CW) Fast switching time of 500 ns and 38.5 dBm instantaneous power in 50 4 GHz. The High power handling 4 GHz in 50 PE42521 exhibits high isolation, fast settling time, and is offered in a 3x3 mm QFN package. 36 dBm CW 38.5 dBm instantaneous power The PE42521 is manufactured on Peregrines 26 dBm terminated port UltraCMOS process, a patented variation of silicon-on- High linearity insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and 65 dBm IIP3 integration of conventional CMOS. Low insertion loss 0.75 dB 3 GHz 1.15 dB 10 GHz Figure 1. Functional Diagram 1.85 dB 13 GHz RFC High isolation 44 dB 3 GHz 30 dB 10 GHz 17 dB 13 GHz RF1 RF2 ESD performance ESD ESD 3kV HBM on RF pins to GND 1.5kV HBM on all pins 1kV CDM on all pins 50 50 CMOS Control Driver and ESD Figure 2. Package Type DOC-50572 LS CTRL Vss EXT 16-lead 3x3 mm QFN Document No. DOC-12814-5 www.psemi.com 2012-2016 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 16 PE42521 Product Specification Table 1. Electrical Specifications 25C, V = 3.3V, Vss = 0V or V = 3.4V, Vss = -3.4V, DD EXT DD EXT (Z = Z = 50) unless otherwise noted S L Parameter Path Condition Min Typ Max Unit As Operation frequency 9 kHz 13 GHz shown 9 kHz 10 MHz 0.60 0.80 dB 10 MHz 3 GHz 0.75 1.00 dB 3 GHz 7.5 GHz 0.95 1.20 dB Insertion loss RFCRFX 7.5 GHz 10 GHz 1.15 1.40 dB 10 GHz 12 GHz 1.75 2.20 dB 12 GHz 13 GHz 1.85 2.60 dB 9 kHz 10 MHz 70 90 dB 10 MHz 3 GHz 46 49 dB 3 GHz 7.5 GHz 35 37 dB Isolation RFXRFX 7.5 GHz 10 GHz 23 26 dB 10 GHz 12 GHz 16 19 dB 12 GHz 13 GHz 14 17 dB 9 kHz 10 MHz 80 90 dB 10 MHz 3 GHz 42 44 dB 3 GHz 7.5 GHz 39 41 dB Isolation RFCRFX 7.5 GHz 10 GHz 26 30 dB 10 GHz 12 GHz 18 21 dB 12 GHz 13 GHz 14 17 dB 9 kHz 10 MHz 23 dB 10 MHz 3 GHz 19 dB 3 GHz 7.5 GHz 16 dB Return loss (active port) RFC-RFX 7.5 GHz 10 GHz 21 dB 10 GHz 12 GHz 10 dB 12 GHz 13 GHz 15 dB 9 kHz 10 MHz 23 dB 10 MHz 3 GHz 19 dB 3 GHz 7.5 GHz 16 dB Return loss (common port) RFC-RFX 7.5 GHz 10 GHz 21 dB 10 GHz 12 GHz 10 dB 12 GHz 13 GHz 16 dB 9 kHz 10 MHz 32 dB 10 MHz 3 GHz 23 dB 3 GHz 7.5 GHz 18 dB Return loss (terminated port) RFX 7.5 GHz 10 GHz 11 dB 10 GHz 12 GHz 6 dB 12 GHz 13 GHz 5 dB 1 Input 0.1 dB compression point RFCRFX 600 MHz 13 GHz Fig. 5 dBm Input IP2 RFCRFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFCRFX 834 MHz, 1950 MHz, and 2700 MHz 65 dBm s Settling time 50% CTRL to 0.05 dB final value 2 4 Switching time 50% CTRL to 90% or 10% of final value 500 700 ns Note 1: The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power PIN (50) 2012-2016 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-12814-5 UltraCMOS RFIC Solutions Page 2 of 16