X-On Electronics has gained recognition as a prominent supplier of RJH60F0DPQ-A0#T0 igbt transistors across the USA, India, Europe, Australia, and various other global locations. RJH60F0DPQ-A0#T0 igbt transistors are a product manufactured by Renesas. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

RJH60F0DPQ-A0#T0

RJH60F0DPQ-A0#T0 electronic component of Renesas
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Part No.RJH60F0DPQ-A0#T0
Manufacturer: Renesas
Category:IGBT Transistors
Description: IGBT, HIGH SPEED, 600V, 50A, TO-247A
Datasheet: RJH60F0DPQ-A0#T0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.2107 ea
Line Total: USD 4.21

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 4.3673
10 : USD 3.4692
100 : USD 2.8481
500 : USD 2.5423
1000 : USD 2.3205

0 - WHS 2


Ships to you between Thu. 06 Jun to Mon. 10 Jun


Multiples : 1

     
Manufacturer
Product Category
Brand
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Transistor Type
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We proudly offer the RJH60F0DPQ-A0#T0 IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RJH60F0DPQ-A0#T0 IGBT Transistors.

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage V = 1.4 V typ. (at I = 25 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 90 ns typ. (at I = 30 A, V = 400 V, V = 15 V, Rg = 5 , Ta = 25C, inductive load) f C CC GE Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V 30 V GES Note1 Collector current Tc = 25 C I 50 A C Note1 Tc = 100C I 25 A C Note1 Collector peak current ic(peak) 100 A Note2 Collector to emitter diode forward peak current i (peak) 100 A DF Collector dissipation P 201.6 W C Junction to case thermal impedance j-c 0.62 C/W Channel temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0324EJ0200 Rev.2.00 Page 1 of 7 Jul 22, 2011 RJH60F0DPQ-A0 Preliminary Electrical Characteristics (Tj = 25C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I 100 A V = 600V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.4 1.82 V I = 25 A, V = 15V CE(sat) C GE Note3 1.7 V I = 50 A, V = 15V C GE Input capacitance Cies 1550 pF V = 25 V CE V = 0 V GE Output capacitance Coes 82 pF f = 1 MHz Reverse transfer capacitance Cres 26 pF Switching time t 46 ns I = 30 A, d(on) C V = 400 V, V = 15 V t 92 ns CE GE r Note3 Rg = 5 t 70 ns d(off) Inductive load t 90 ns f Note3 C-E diode forward voltage V 1.2 2.1 V I = 20 A ECF1 F Note3 C-E diode forward voltage V 1.5 V I = 40 A ECF2 F C-E diode reverse recovery time t 90 ns I = 20 A rr F di /dt = 100 A/ s F Notes: 3. Pulse test R07DS0324EJ0200 Rev.2.00 Page 2 of 7 Jul 22, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ID4
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IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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