Preliminary Datasheet RJH60F7DPQ-A0 B0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 1BFeatures Low collector to emitter saturation voltage V = 1.35 V typ. (at I = 50 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 74 ns typ. (at I = 30 A, V = 400 V, V = 15 V, Rg = 5 , Ta = 25C, inductive load) f C CE GE 2Outline B RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 3BAbsolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 90 A C Tc = 100C I 50 A C Note1 Collector peak current ic(peak) 180 A Note2 Collector to emitter diode forward peak current i (peak) 100 A DF Collector dissipation P 328.9 W C Junction to case thermal impedance (IGBT) j-c 0.38 C/W Junction to case thermal impedance (Diode) j-cd 2.0 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% B4 R07DS0328EJ0200 Rev.2.00 Page 1 of 7 Jul 22, 2011 RJH60F7DPQ-A0 Preliminary Electrical Characteristics (Tj = 25C) Item SymbolMin Typ Max Unit Test Conditions Zero gate voltage collector current I 100 A V = 600V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.35 1.75 V I = 50 A, V = 15V CE(sat) C GE Note3 V 1.6 V I = 90 A, V = 15V CE(sat) C GE Input capacitance Cies 4700 pF V = 25 V CE V = 0 V GE Output capacitance Coes 198 pF f = 1 MHz Reverse transfer capacitance Cres 83 pF Switching time t 63 ns I = 30 A, d(on) C V = 400 V, V = 15 V t 81 ns CE GE r Note3 Rg = 5 t 142 ns d(off) Inductive load t 74 ns f Note3 C-E diode forward voltage V 1.2 2.1 V I = 20 A ECF1 F Note3 V 1.5 V I = 40 A ECF2 F C-E diode reverse recovery time t 90 ns I = 20 A rr F di /dt = 100 A/ s F Notes: 3. Pulse test B5 R07DS0328EJ0200 Rev.2.00 Page 2 of 7 Jul 22, 2011