Product Information

MMBZ30VALFHT116

MMBZ30VALFHT116 electronic component of ROHM

Datasheet
ESD Suppressors / TVS Diodes 225mW 28.5-31.5Vbr A-common SOT-23 TVS
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2878 ea
Line Total: USD 0.29

40285 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
40342 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2529
10 : USD 0.1445
100 : USD 0.0697
1000 : USD 0.0498
3000 : USD 0.0398
9000 : USD 0.0337
24000 : USD 0.0311
45000 : USD 0.0299
99000 : USD 0.0287

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

MMBZ30VALFH Transient Voltage Suppressor (AEC-Q101 qualified) Data sheet Outline V V 24.0 RWM P 40 W PP I 0.95 A PP Feature Inner Circuit High reliability Small mold type Application Packaging Specification ESD Protection Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Quantity(pcs) 3000 Structure Taping Code T116 Silicon Epitaxial Planar Marking D1E (T = 25) Absolute Maximum Rating a Min. Max. Parameter Symbol Conditions Unit tp10/1000us P - 24 W PP1 MMBZ5V6AL MMBZV10AL Peak Pulse Power tp10/1000us P - 40 W PP2 MMBZ12VAL MMBZV33AL T Junction temperature - - 150 j T Storage temperature - -65 150 stg P On Glasss-epoxy substrate - 225 mW D1 Power dissipation P On Alumina substrate - 300 mW D2 Air - 30 kV IEC61000-4-2 Contact - 30 kV Machine model - 2 kV V ESD capability* ESD Human body model - 8 kV MIL-STD-883 level3 CDM Charged device model) - 500 V *IEC61000-4-2 C=150pF R=330 Machine model C=200pF R=0 Human body model C=100pF R=1.5k www.rohm.com 1/5 2018 ROHM Co., Ltd. All rights reserved. 2019/06/19 Rev.002 Not Recommended for New DesignsMMBZ30VALFH Data sheet Characteristic (Ta = 25C) Symbol Reverse Stand-off Reverse Current Forward voltage P/N Breakdown voltage V (V) voltage BR I (A) V (V) R F V (V) RW M I(mA) V (V) I (mA) MIN. Nom. MAX. MAX. MAX. MAX. t R F MMBZ5V6AL 5.32 5.60 5.88 20 5 3.0 0.9 10 3.0 MMBZ6V2AL 5.89 6.20 6.51 1 0.2 3.0 0.9 10 3.0 MMBZ6V8AL 6.46 6.80 7.14 1 0.3 4.5 0.9 10 4.5 MMBZ9V1AL 8.65 9.10 9.56 1 0.1 6.0 0.9 10 6.0 MMBZ10VAL 9.50 10.00 10.50 1 0.02 6.5 0.9 10 6.5 MMBZ12VAL 11.40 12.00 12.60 1 0.005 8.5 0.9 10 8.5 MMBZ15VAL 14.25 15.00 15.75 1 0.005 12.0 0.9 10 12.0 MMBZ16VAL 15.20 16.00 16.80 1 0.005 13.0 0.9 10 13.0 MMBZ18VAL 17.10 18.00 18.90 1 0.005 14.5 0.9 10 14.5 MMBZ20VAL 19.00 20.00 21.00 1 0.005 17.0 0.9 10 17.0 MMBZ24VAL 22.80 24.00 25.20 1 0.005 20.0 0.9 10 20.0 MMBZ27VAL 25.65 27.00 28.35 1 0.005 22.0 0.9 10 22.0 MMBZ30VAL 28.50 30.00 31.50 1 0.005 24.0 0.9 10 24.0 MMBZ33VAL 31.35 33.00 34.65 1 0.005 26.0 0.9 10 26.0 Breakdown voltage (V ) is measured by applying current with 40ms pulse. BR Symbol Capacitance between Peak pluse current Clamping voltage P/N terminals Ipp(A) 10/1000us Vcl(V) Ct(pF) MAX. MAX. Ipp(A) TYP. VR(V) MMBZ5V6AL 3.00 8.0 3.00 230 0 MMBZ6V2AL 2.76 8.7 2.76 180 0 MMBZ6V8AL 2.50 9.6 2.50 165 0 MMBZ9V1AL 1.70 14.0 1.70 120 0 MMBZ10VAL 1.70 14.2 1.70 105 0 MMBZ12VAL 2.35 17 2.35 85 0 MMBZ15VAL 1.90 21 1.90 75 0 MMBZ16VAL 1.70 23 1.70 70 0 MMBZ18VAL 1.60 25 1.60 60 0 MMBZ20VAL 1.40 28 1.40 55 0 MMBZ24VAL 1.25 32 1.25 46 0 MMBZ27VAL 1.00 40 1.00 42 0 MMBZ30VAL 0.95 43 0.95 38 0 MMBZ33VAL 0.87 46 0.87 34 0 Marking Marking Marking MMBZ5V6AL D0M MMBZ16VAL D0Y MMBZ6V2AL D0N MMBZ18VAL D0Z MMBZ6V8AL D0P MMBZ20VAL D1A MMBZ9V1AL D0S MMBZ24VAL D1C MMBZ10VAL D0T MMBZ27VAL D1D MMBZ12VAL D0V MMBZ30VAL D1E MMBZ15VAL D0X MMBZ33VAL D1F www.rohm.com 2/5 2018 ROHM Co., Ltd. All rights reserved. 2019/06/19 Rev.002 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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