DA112S1RL STMicroelectronics

DA108S1 DA112S1 Diode array Features Array of 8 or 12 diodes Low input capacitance Suitable for digital line protection Complies with following standards: SO-8 IEC 61000-4-2 Level 4 15kV (air discharge) 8kV (contact discharge) Figure 1. Functional diagram: DA108S1 Applications I/O1 REF1 Protection of logic side of ISDN S-interface Protection of I/O lines of microcontroller I/O2 REF2 Signal conditioning I/O3 REF3 Description Array of 8 or 12 diodes configured by cells of 2 I/O4 REF4 diodes, each cell being used to protect signal line from transient overvoltages by clamping action. As maximum voltage of each diode is 18 V, maximum input voltage range between two I/Os is Figure 2. Functional diagram: DA112S1 either 0 V to 18 V (REF1 = 0 V and REF2 = +18 V) or -9 V to +9 V (REF1 = -9 V and REF2 = +9 V) I/O118 REF1 I/O227 I/O6 I/O336 REF2 I/O445 I/O5 January 2008 Rev 6 1/8 www.st.comCharacteristics DA108S1 / DA112S1 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage (for one single diode) 18 V RRM (1) I Repetitive peak forward current t = 8/20 s 12 A PP p P Power dissipation 0.73 W T Storage temperature range -55 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. The surge is repeated after the device returns to ambient temperature Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to ambient 170 C/W th (j-a) 1. Table 3. Electrical characteristics(T = 25 C) amb Symbol Parameter Max. Unit DA108S1 9 I = 12 A, PP V Peak forward voltage V FP t = 8/20 s p DA112S1 12 V Forward voltage I = 50 mA 1.2 V F F I Reverse leakage current V = 15 V 2 A R R 2/8