DALC112S1 STMicroelectronics

DALC112S1 LOW CAPACITANCE DIODE Application Specific Discretes TM ARRAY FOR ESD PROTECTION A.S.D. MAIN APPLICATIONS Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O SO8 DESCRIPTION ARRAY of 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltagesby clamping action. Its very low capacitance allows to protect fast signals with no distortion. It is particularlysuited for the protection of graphic video ports. FUNCTIONAL DIAGRAM FEATURES ARRAYOF12 DIODESFOR ESDPROTECTION. PEAK REVERSE VOLTAGE V = 18V PER RRM I/O 1 REF 1 DIODE. VERYLOWCAPACITANCE PERDIODE: C <5pF. I/O 2 VERY LOW LEAKAGECURRENT : I <2 A. R I/O 6 I/O 3 REF 2 COMPLIESWITHTHE FOLLOWINGSTANDARDS : I/O 4 I/O 5 IEC1000-4-2level 3 8 kV(air discharge) 6 kV(contactdischarge) January 1998 - Ed: 4 1/3DALC112S1 TYPICAL APPLICATION Vcc DALC112S1 ABSOLUTE MAXIMUM RATINGS (T =25C). amb Symbol Parameter Value Unit V RRM Peak reverse voltage per diode 18 V T Storage temperaturerange -55 to + 150 C stg T Maximum junctiontemperature j 150 C ELECTRICAL CHARACTERISTICS (T =25C). amb Symbol Parameter Typ. Max. Unit V Forward voltage I = 50 mA 1.3 V F F I Reverse leakage current per diode V =15V 2 A R R Input capacitance betweenLine and GND C V = 5 V, V = 30 mV, F = 1 MHz 7pF cc RMS (see figure 1 below) Fig 1 : Input capacitancemeasurement REF2 +VCC connected between REF1 and REF2 I/O Input applied : V Vcc = 5V, VRMS=30 mV, F=1MHz CC G REF1 2/3