X-On Electronics has gained recognition as a prominent supplier of PD55003-E rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. PD55003-E rf mosfet transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

PD55003-E STMicroelectronics

PD55003-E electronic component of STMicroelectronics
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Part No.PD55003-E
Manufacturer: STMicroelectronics
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors RF POWER TRANS
Datasheet: PD55003-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 8.3835 ea
Line Total: USD 419.18

Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 400
Multiples : 1
400 : USD 11.2645
500 : USD 11.1514
1000 : USD 11.0396
2000 : USD 10.9291
2500 : USD 10.8199
3000 : USD 10.712
4000 : USD 10.6054
5000 : USD 10.4988
10000 : USD 10.3935
20000 : USD 10.2895

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 50
Multiples : 50
50 : USD 8.3835
100 : USD 7.7625
200 : USD 7.7625
250 : USD 7.7625
750 : USD 7.7625

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Ships to you between Fri. 07 Jun to Thu. 13 Jun

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1 : USD 13.0812
10 : USD 11.3434
25 : USD 10.8197
50 : USD 10.1066
100 : USD 9.3934
250 : USD 9.2374

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1 : USD 16.52
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Ships to you between Fri. 07 Jun to Thu. 13 Jun

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50 : USD 11.23

     
Manufacturer
Product Category
Output Power
Kind Of Package
Case
Polarisation
Electrical Mounting
Kind Of Transistor
Kind Of Channel
Type Of Transistor
Open-Loop Gain
Drain-Source Voltage
Drain Current
Efficiency
Frequency
Gate-Source Voltage
Power Dissipation
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PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 3 W with 17dB gain 500 MHz / 12.5 V OUT PowerSO-10RF Description (formed lead) The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the PowerSO-10RF first true SMD plastic RF power package, the (straight lead) PowerSO-10RF. The PD55003s superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of Drain Gate assembly. Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55003-E PowerSO-10RF (formed lead) Tube PD55003S-E PowerSO-10RF (straight lead) Tube PD55003TR-E PowerSO-10RF (formed lead) Tape and reel PD55003STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12273 Rev 4 1/29 www.st.com 29Contents PD55003-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 Performance for the PowerSO-10RF formed lead . 7 4.2 Performance for the PowerSO-10RF straight lead 10 5 Typical performance (860 MHz) . 12 5.1 Performance for the PowerSO-10RF formed lead 12 6 Test circuit 13 7 Circuit layout 15 8 Common source s-parameter 16 9 Package mechanical data 22 10 Revision history . 28 2/29 Doc ID 12273 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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