Product Information

PD55015TR-E

PD55015TR-E electronic component of STMicroelectronics

Datasheet
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) T/R
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 12.5035 ea
Line Total: USD 62.52

0 - Global Stock
MOQ: 5  Multiples: 600
Pack Size: 600

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 600
Multiples : 600

Stock Image

PD55015TR-E
STMicroelectronics

600 : USD 21.225
3000 : USD 21.0125
6000 : USD 20.8
9000 : USD 20.6
12000 : USD 20.3875
15000 : USD 20.1875
24000 : USD 19.9875
30000 : USD 19.7875
75000 : USD 19.5875

0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

PD55015TR-E
STMicroelectronics

1 : USD 23.0736
10 : USD 21.2819

0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 5
Multiples : 600

Stock Image

PD55015TR-E
STMicroelectronics

5 : USD 12.5035

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Output Power
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Pin Count
Number Of Elements
Channel Type
Screening Level
Channel Mode
Rad Hardened
Vswr Max
Frequency Max
Forward Transconductance Typ
Input Capacitance Typ Vds
Output Capacitance Typ Vds
Power Gain Typ Vds
Drain Efficiency Typ
Reverse Capacitance Typ
Drain Source Voltage Max
Deleted
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Additional Infomation About Product

PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P =15 W with 14dB gain 500 MHz/12.5 V OUT PowerSO-10RF Description (formed lead) The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted PowerSO-10RF in the first true SMD plastic RF power package, (straight lead) the PowerSO-10RF. The PD55015-Es superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of Drain assembly. Gate Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55015-E PowerSO-10RF (formed lead) Tube PD55015S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12596 Rev 3 1/25 www.st.com 25Contents PD55015-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 Performance related to the PowerSO-10RF formed lead 7 4.2 Performance related to the PowerSO-10RF straight lead . 9 5 Test circuit 11 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 19 9 Revision history . 24 2/25 Doc ID 12596 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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