X-On Electronics has gained recognition as a prominent supplier of 1SS133M R0G Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1SS133M R0G Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1SS133M R0G Taiwan Semiconductor

1SS133M R0G electronic component of Taiwan Semiconductor
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Part No.1SS133M R0G
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching DO-34, 90V, 0.15A, Switching Diode & Array
Datasheet: 1SS133M R0G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1193 ea
Line Total: USD 0.12 
Availability - 8261
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8261
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1193
10 : USD 0.0617
100 : USD 0.0323
1000 : USD 0.0252
2500 : USD 0.0224
10000 : USD 0.0197
20000 : USD 0.0168
50000 : USD 0.0155
100000 : USD 0.0155

   
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RoHS - XON
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We are delighted to provide the 1SS133M R0G from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS133M R0G and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1SS133M Taiwan Semiconductor Small Signal Product 300mW, Hermetically Sealed Glass Switching Diodes FEATURES - Fast switching device (t < 4.0 ns) rr - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - RoHS compliant DO-34 - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band - Marking code: 133 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 300 mW D Working Inverse Voltage W 90 V IV Average Rectified Current I 150 mA O Non-Repetitive Peak Forward Current I 450 mA FM I Peak Forward Surge Current 2 A FSURGE o Operating Junction Temperature T + 175 J C o Storage Temperature Range T -65 to +200 STG C PARAMETER SYMBOL MIN MAX UNIT I =500nA Breakdown Voltage B 80 -- V R V Forward Voltage I =100mA V 1.2 V F F V =80V Reverse Leakage Current I 500 R nA R V =0, f=1.0MHz Junction Capacitance C -- 4.0 pF R j Reverse Recovery Time (Note 1) t -- 4.0 ns rr Notes: 1. Reverse Recovery Test Conditions: I =I =10mA, R =100, I =1mA F R L RR Document Number: DS S1403003 Version: C151SS133M Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics 100 10000 o T =100 C A 1000 o T =75 C A 10 o T =50 C A 100 o T =125 C A o T =75 C A o T =25 C 1 A o T =25 C o A T =-25 C A 10 1 0. 1 0 20406080 100 120 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 Forward Voltage : V (V) Reverse Voltage : V (V) F R Fig. 4 Reverse Recovery Time Characteristics Fig. 3 Capacitance Between Terminals Characteristics 5 3. 0 V = 6 V R f = 1 MHz I = 1/10 I rr R 2. 5 4 2. 0 3 1. 5 2 1. 0 1 0. 5 0 0. 0 04 8 12 16 20 0 5 10 15 20 25 30 Forward Current : I (mA) Reverse Voltage : V (V) F R Fig. 5 Surge Current Characteristics Fig. 6 Reverse Recovery Time ( trr ) Measurement Circuit 100 10 1 0. 1 1 10 100 1000 10000 Pulse Width : Tw (ms) Document Number: DS S1403003 Version: C15 Capacitance Between Terminals : Forward Current : I (mA) F Surge Current : I (A) C (pF) SURGE T Reverse Current : I (nA) R Reverse Recovery Time : tr (ns)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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