TSM100N06 60V N-Channel Power MOSFET TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Drain 3. Source 60 6.7 V =10V 100 GS Features Block Diagram Advanced Trench Technology Low R 6.7m (Max.) DS(ON) Low gate charge typical 81nC (Typ.) Low Crss typical 339pF (Typ.) Ordering Information Part No. Package Packing TSM100N06CZ C0G TO-220 50pcs / Tube Note: G denote for Halogen Free Product N-Channel MOSFET o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS (3) T =25C 100 C T =70C 80 C Continuous Drain Current I A D T =25C 14 A T =70C 11 A Drain Current-Pulsed Note 1 I 400 A DM Avalanche Current, L=0.1mH I 71 A AS Avalanche Energy, L=0.1mH E , E 400 mJ AS AR T =25C 167 C T =70C 107 C Maximum Power Dissipation P W D T =25C 2 A T =70C 1.3 A Storage Temperature Range T -55 to +150 C STG Operating Junction Temperature Range T -55 to +150 C J * Limited by maximum junction temperature Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R 0.8 C/W JC Thermal Resistance - Junction to Ambient R 62.5 C/W JA Notes: Surface mounted on FR4 board t 10sec Document Number: DS P0000019 1 Version: B15 TSM100N06 60V N-Channel Power MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 60 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 30A R -- 5.7 6.7 m GS D DS(ON) Gate Threshold Voltage V = V , I = 250uA V 2 3 4 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 48V, V = 0V I -- -- 1 uA DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Dynamic Total Gate Charge Q -- 81 -- g V = 30V, I = 30A, DS D nC Gate-Source Charge Q -- 23 -- gs V = 10V GS Gate-Drain Charge Q -- 24 -- gd Input Capacitance C -- 4382 -- iss V = 30V, V = 0V, DS GS Output Capacitance C -- 668 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 339 -- rss Switching Turn-On Delay Time t -- 25 -- d(on) Turn-On Rise Time t -- 19 -- V = 10V, V = 30V, GS DS r nS Turn-Off Delay Time R = 3.3 t -- 85 -- G d(off) Turn-Off Fall Time t -- 43 -- f Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward V =0V, I =20A V - 0.8 1.3 V GS S SD Voltage o Reverse Recovery Time t 36 nS I = 30A, T =25 C S J fr dI/dt = 100A/us Reverse Recovery Charge Q 53 nC fr Notes: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 2. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal JA reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC CA is determined by the user s board design. R shown below for single device operation on FR-4 in still air JA 3. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 75A Document Number: DS P0000019 2 Version: B15