Product Information

TSM10NC60CF C0G

Name: TSM10NC60CF C0G
Brand: Taiwan Semiconductor
SKU: TSM10NC60CFC0G_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

TSM10NC60CF C0G electronic component of Taiwan Semiconductor

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Datasheet

MOSFET N Trench 600V 10A (Tc) 4.5V @ 250uA 750 mÎ© @ 2.5A,10V ITO-220S RoHS

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4169 ea
Line Total: USD 1.42

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Wed. 29 May MOQ : 1 Multiples : 1 TSM10NC60CF C0G Taiwan Semiconductor	1 : USD 1.4169 10 : USD 1.1686 30 : USD 0.9909 100 : USD 0.8424 500 : USD 0.818 1000 : USD 0.8058

0 - WHS 2 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 TSM10NC60CF C0G Taiwan Semiconductor	1 : USD 1.8508 5 : USD 1.6595 13 : USD 1.262 35 : USD 1.1927

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Additional Infomation About Product

The TSM10NC60CF C0G MOSFET N Trench 600V 10A (Tc) 4.5V @ 250uA 750 mO @ 2.5A,10V ITO-220S RoHS is an electronic part manufactured by Taiwan Semiconductor. This part is a MOSFET with N-Trench Technology having a maximum voltage rating of 600V and a maximum current rating of 10A. It has a gate-source voltage threshold of 4.5V with leakage current of 250 µA, a static drain-source on-resistance of 750 mO at 2.5A and 10V, and comes in the ITO-220S package compliant with the RoHS directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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Manufacturer Taiwan Semiconductor Taiwan Semiconductor
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 10 A 10 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 670 mOhms 670 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 45 W 45 W
Mounting Style Through Hole Through Hole
Package / Case I TO - 220S - 3 I TO - 220S - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 33 nC 33 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Taiwan Semiconductor Taiwan Semiconductor
Fall Time 21 ns 21 ns
Product Type Mosfet Mosfet
Rise Time 21 ns 21 ns
Factory Pack Quantity : 2000 2000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 29 ns 29 ns
Typical Turn-On Delay Time 14 ns 14 ns
Category Mosfet Mosfet
Brand Category Taiwan Semiconductor Taiwan Semiconductor