X-On Electronics has gained recognition as a prominent supplier of CUS06(TE85L,Q,M) schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. CUS06(TE85L,Q,M) schottky diodes & rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

CUS06(TE85L,Q,M)

CUS06(TE85L,Q,M) electronic component of Toshiba
Images are for reference only
See Product Specifications
Part No.CUS06(TE85L,Q,M)
Manufacturer: Toshiba
Category:Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers 20V Vrrm .07A IF 20A 0.45V VFM
Datasheet: CUS06(TE85L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.9029
10 : USD 0.7346
100 : USD 0.2008
500 : USD 0.1528
1000 : USD 0.1186
4000 : USD 0.1037
8000 : USD 0.0983
24000 : USD 0.0908
48000 : USD 0.0876
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CUS06 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS06 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Application + 0.2 1.25 0.1 + 0.05 0.13 0.88 0.1 0.03 Forward voltage: V = 0.45 V (max) I = 0.7 A FM F Average forward current: I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 20 V RRM Suitable for high-density board assembly due to the use of a small TM Surface-mount package, USFLAT 0.6 0.1 0.88 0.1 Absolute Maximum Ratings (Ta = 25C) 0.6 0.1 Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 20 V RRM 1.0 (Note 1) 0.78 0.1 Average forward current I A F (AV) ANODE CATHODE Peak one cycle surge forward current I 20 (50 Hz) A FSM 0.6 0.1 (Non-repetitive) Junction temperature T 40 to 150 C j JEDEC Storage temperature range T 40 to 150 C stg JEITA Note 1: Ta = 66C: Device mounted on a glass-epoxy board TOSHIBA 3-2B1A (Board size: 50 mm 50 mm, Soldering land: 6 mm 6 mm) Weight: 0.004 g (typ.) Rectangular waveform ( = 180), V = 10 V R Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-02 1 2013-11-01 2.5 0.2 0.6 0.1 1.9 0.1 0 ~ 0.05 0.5 0.1 1.4 0.2 CUS06 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A 0.35 FM (1) FM Peak forward voltage V V I = 0.7 A 0.42 0.45 FM (2) FM V I = 1.0 A 0.47 FM (3) FM I V = 5 V 0.7 A RRM (1) RRM Repetitive peak reverse current I V = 20 V 3.0 30 A RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 40 pF j R Device mounted on a ceramic board (board size: 50 mm 50 mm) 75 (soldering land: 2 mm 2 mm) (board thickness: 0.64 mm) Thermal resistance R C/W th (j-a) (junction to ambient) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 150 (soldering land: 6 mm 6 mm) (board thickness: 1.6 mm) Thermal resistance (junction to lead) R Junction to lead of cathode side 30 C/W th (j-) Marking Abbreviation Code Part No. 6 CUS06 Standard Soldering Pad Unit: mm 2.0 0.5 0.8 1.1 0.8 Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is V -I trade-off type, lower V higher I therefore, thermal runaway might occur when F RRM F RRM voltage is applied. Please take forward and reverse loss into consideration during the design. The absolute maximum ratings are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating F(AV) of I and T be below 120C. When using this device, take the margin into consideration by F(AV) j using an allowable Tamax-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at T of below 120C. j Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance value. Refer to the Rectifiers databook for further information. 2 2013-11-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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