TBD62308AFAG,EL Toshiba

TB D62308AFAG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62308AFAG 4channel Low active high current sink type DMOS transistor array TBD62308AFAG are DMOS transistor array with 4 circuits. It has a clamp diodef or switching inductive loads built-in in each output .Please be careful about thermal conditions during use. Features 4 circuits built-in High voltage : V = 50 V (MAX) OUT P-SSOP24-0613-1.00-001 High current : I = 1.5 A/ch (MAX) OUT Weight: 0.35 g (Typ.) Input voltage(output on) : V - 3.5 V (MAX) CC Input voltage(output off) : V - 0.4 V (MIN) CC Package : P-SSOP24-0613-1.00-001 Pin connection (top view) COMMON O4 I4 NC GND GND GND GND NC I3 O3 COMMON 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 VCC1 O1 I1 NC GND GND GND GND NC I2 O2 VCC2 Pin connection may be simplified for explanatory purpose. 2016-2017 2017-07-14 1 Toshiba Electronic Devices & Storage Corporation TB D62308AFAG Pin explanations Pin No. Pin name Function 1 VCC1 Power supply pin 2 O1 Output pin 1 3 I1 Input pin 1 Non-connection pin 4 NC 5 GND GND pin GND pin 6 GND 7 GND GND pin 8 GND GND pin 9 NC Non-connection pin 10 I2 Input pin 2 Output pin 2 11 O2 12 VCC2 Power supply pin 13 COMMON Common pin 14 O3 Output pin 3 15 I3 Input pin 3 16 NC Non-connection pin 17 GND GND pin GND pin 18 GND 19 GND GND pin 20 GND GND pin 21 NC Non-connection pin 22 I4 Input pin 4 23 O4 Output pin 4 24 COMMON Common pin COMMON Equivalent circuit Clamp diode VCC OUTPUT INPUT Clamp Circuit Equivalent circuit may be simplified for explanatory purpose. 2016-2017 2017-07-14 2 Toshiba Electronic Devices & Storage Corporation