TBD62387AFNG,EL Toshiba

TBD62387A series TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62387APG, TBD62387AFNG 8-ch low active sink type DMOS transistor array TBD62387A series are DMOS transistor arras ywith 8 circuits. They TBD62387APG incorporate clamp diodes for clamping a back-EMF, which generates during inductive-load drive. Please be careful about thermal conditions during use. Features Built-in 8 circuits High voltage : V = 50 V (max) OUT DIP20-P-300-2.54A High current : I = 500 mA/ch (max) OUT Input voltage (output on) : 0 to V -3.5 V CC TBD62387AFNG Input voltage (output off) : V -0.4 V to 5.5 V CC Package : PG type DIP20-P-300-2.54A FNG type SSOP20-P-225-0.65A SSOP20-P-225-0.65A Weight DIP20-P-300-2.54A : 1.4 g (typ.) Pin Assignment (top view) SSOP20-P-225-0.65A : 0.1 g (typ.) COMMON O1 O2 O3 O4 O5 O6 O7 O8 VCC NC I1 I2 I3 I4 I5 I6 I7 I8 GND Pin connection may be omitted partially or simplified for explanatory purpose. 2017-03-21 1 2017 TOSHIBA Corporation TBD62387A series Pin Descriptions Pin No. Pin name Function 1 NC Non connection pin 2 I1 Input pin 3 I2 Input pin 4 I3 Input pin 5 I4 Input pin 6 I5 Input pin 7 I6 Input pin 8 I7 Input pin 9 I8 Input pin 10 GND Ground pin 11 VCC Power supply pin 12 O8 Output pin 13 O7 Output pin 14 O6 Output pin 15 O5 Output pin 16 O4 Output pin 17 O3 Output pin 18 O2 Output pin 19 O1 Output pin 20 COMMON Common pin Basic Circuit COMMON Clamp diode VCC OUTPUT INPUT Basic circuit may be omitted partially or simplified for explanatory purpose. 2017-03-21 2