NPN Plastic Silicon Phototransistor OP593, OP598, OP798 Series OP598 OP593 Features: OP798 Dark blue epoxy package Wide receiving angle Variety of sensitivity ranges TO-18 equivalent package style Description: Each device in this series consists of an NPN silicon phototransistor molded in a dark blue epoxy packages. The wide receiving angle (130) of the OP593 series devices provides relatively even reception over a large area. The narrow receiving angle (25) of the OP598 and OP798 series devices provides a relatively small reception area. These devices are 100% production tested using infrared light for close correlation with OPTEK s GaAs and GaAIAs emitters. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. 1 Applications: Ordering Information Non-contact reflective or slotted sensor Part Number Sensor Viewing Angle Lead Length Assembly line automation OP593A Machine automation OP593B 130 Machine Safety 2 OP593C End of travel sensor Transistor Pin Sensor Door sensor OP598A 1 Collector Safety Curtain OP598B 25 2 Emitter 0.75 OP598C OP593 OP798A OP798B R BE 25 Transistor OP798C OP798D 4.670.15 .184.006 OP598, OP798 OP555 - CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK S molded plastics. 4.670.15 .184.006 MILLIMETERS DIMENSIONS ARE IN: INCHES RoHS General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev B 11/2019 Page 1 TT electronics plc Form 500-1080-001 Rev - 06/2019 NPN Plastic Silicon Phototransistor OP593, OP598, OP798 Series Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage and Operating Temperature Range -40 C to +100 C Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V Continuous Collector Current 50 mA (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (2) Power Dissipation 250 mW Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS On-State Collector Current OP593A 3.0 - 4 OP593B 2.0 - 4 OP593C 1.0 - 4 V = 5 V. Light source is an unfiltered CE GaAlAs LED with a peak emission wave- OP598A 7.5 - 10 I OP598B 5.0 - 10 length of 890 nm and E of 1.7 mW/ C(ON) e(APT) mA 2 OP598C 2.5 - 10 cm average within a .250 diameter aperture. OP798A 4.90 - 15.00 OP798B 3.30 - 9.20 OP798C 1.90 - 6.10 OP798D 1.90 - 15.00 I Collector-Dark Current - - 100 nA V = 10 V, E = 0 CEO CE E V Collector-Emitter Breakdown Voltage 30 - - V I = 100 A (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E 2 V Collector-Emitter Saturation Voltage - - 0.40 V I = 0.4 mA, E = 1.7 mW/cm CE(SAT) C E General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev B 11/2019 Page 2 TT electronics plc Form 500-1080-001 Rev - 06/2019