OP599B TT Electronics

Prod uct Bul le tin OP599 June 1996 NPN Plas tic Sili con Pho to tran sis tors Type OP599 Se ries o Fea tures Ab so lute Maxi mum Rat ings (T = 25 C un less oth er wise noted) A Collector- Emitter Volt age 30 V Variety of sensitivity ranges Emitter- Collector Volt age . 5.0 V T-1 3/4 package style Con tinu ous Col lec tor Cur rent . 50 mA o o Stor age and Op er at ing Tem pera ture Range -40 C to +100 C De scrip tion Lead Sol der ing Tem pera ture (1/16 inch 1.6 mm from case for 5 sec. with o (1) The OP599 series phototransistor sol der ing iron) . 260 C (2) consists of an NPN silicon Power Dis si pa tion 100 mW phototransistor mounted in a dark blue Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. plastic injection molded shell package. Max. 20 grams force may be applied to leads when soldering. The narrow receiving angle provides o o (2) Derate linearly 1.33 mW/ C above 25 C. excellent on-axis coupling. The sensors (3) V = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission CE 2 wavelength of 890 nm and E of .25 mW/cm . are 100% production tested for close e(APT) (4) This dimension is held to within 0.005 on the flange edge and may vary up to 0.020 in correlation with Optek GaAlAs emitters. the area of the leads. Opteks packaging process provides Typi cal Per form ance Curves excellent optical and mechanical axis alignment. The shell also provides Typi cal Spec tral Re sponse excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions. Wave length - nm Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972)323- 2396 3-34Types OP599 o Elec tri cal Char ac ter is tics (T = 25 C un less oth er wise noted) A SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS On-State Collector Current OP599D 0.20 mA See Note (3) OP599C 0.40 mA See Note (3) I 1.95 C(ON) OP599B 1.20 mA See Note (3) 3.85 OP599A 2.35 mA See Note (3) I Collector Dark Current 100 nA V = 10.0 V, E = 0 CEO CE e V Collector-Emitter Breakdown Voltage 30 V (BR)CEO I = 100 A C Emitter-Collector Breakdown Voltage V (BR)ECO 5.0 V I = 100 A E Collector-Emitter Saturation Voltage I = 100 A C V CE(SAT) 0.40 V 2(3) E = 0.25 mW/cm e Typi cal Per form ance Curves 2 E - Irradiance - mW/cm e Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972 )323- 2200 Fax (972)323- 2396 3-35