DG4599E www.vishay.com Vishay Siliconix Power-off Isolation, 6 , 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DESCRIPTION FEATURES The DG4599E is a high performance single-pole, Low switch on-resistance (6 ) double-throw (SPDT) analog switch designed for 1.8 V to +1.8 V to +5.5 V single supply operation Available 5.5 V operation with a single power rail. Isolation in powered-off mode Fabricated with high density CMOS technology, the device Available Low voltage logic control achieves low on resistance of 6 and switch off capacitance of 7 pF at a 5 V power supply and low power Control logic inputs can go over V+ consumption, and fast switching speeds. Low parasitic capacitance The DG4599E features break before make switching Break before make switching performance. It can handle both analog and digital signals Latch-up performance exceeds 200 mA per JESD 78 and permits signals with amplitudes of up to V+ to be transmitted in either direction. High ESD rating A power-off protection circuit is built into the switch to - 7000 V human body model (JS-001) prevent an abnormal current path through the signal pins - 1000 V charge device model (JS-002) during the power-off condition. The part can withstand greater than 7 kV ESD (human body model). The DG4599E Material categorization: for definitions of compliance is available in the compact SC-70-6L package. please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Battery powered devices Consumer and computing Instrumentation Medical equipment Control and automation FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SC-70 IN NO (Source ) 1 6 1 V+ COM 2 5 GND NC (Source ) 3 4 2 Top view Device marking H8 TRUTH TABLE ORDERING INFORMATION LOGIC NC NO TEMP. RANGE PACKAGE PART NUMBER 0On Off -40 C to +85 C SC-70-6 DG4599EDL-T1-GE3 1Off On Notes Logic 0 0.8 V Logic 1 2.4 V S18-0420-Rev. C, 23-Apr-18 Document Number: 76618 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000DG4599E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT V+, COM, NC, NO, IN reference to GND -0.3 to 6 V Continuous current (any terminal) 50 mA Peak current (pulsed at 1 ms, 10 % duty cycle) 200 Storage temperature -65 to +150 C a b Power dissipation (packages) 6-pin SC-70 250 mW ESD / HBM JS-001 7000 V ESD / CDM JS-002 1000 Latch up Per JESD78 with 1.5 x voltage clamp 200 mA Notes a. All leads welded or soldered to PC board b. Derate 3.1 mW/C above 70 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 5 V) TEST CONDITIONS LIMITS UNLESS OTHERWISE SPECIFIED -40 C to +85 C a PARAMETER SYMBOL TEMP. UNIT V+ = 5 V, 10 % b c b MIN. TYP. MAX. e V = 0.8 V or 2.4 V IN Analog Switch V , V NO NC d Analog signal range Full 0 - V+ V V COM Room - 6 60 d Drain-source on-resistance R V+ = 4.5 V, V = 3 V, I , I = 10 mA DS(on) COM NO NC Full - 8 65 R d DS(on) R flatness V+ = 5 V, V = 1.5 V, 3.5 V, I , I = 10 mA Room - 0.4 - DS(on) COM NO NC flatness d R match R V+ = 4.5 V, V = 3 V, I , I = 10 mA Room - 0.04 2 DS(on) DS(on) COM NO NC Room -1.5 - 1.5 I , NO(off) I Full -4 - 4 NC(off) V+ = 5.5 V, f Switch-off leakage current V , V = 1 V / 4.5 V, V = 4.5 V / 1 V NO NC COM Room -1 - 1 I nA COM(off) Full -4 - 4 Room -1 - 1 V+ = 5.5 V, f Channel-on leakage current I COM(on) V , V = V = 1 V / 4.5 V NO NC COM Full -4 - 4 V+ = 0 V, V = 5 V, NO/NC open, V = GND Full - - 5 COM IN Power-down leakage I A PD V+ = 0 V, V , V = 5 V, COM open, V = GND Full - - 5 NO NC IN Digital Control Input high voltage V Full 2.4 - - INH V Input low voltage V Full - - 0.8 INL d Input capacitance C Full - 6 - pF IN Input current I or I V = 0 V or V+ Full -1 - 1 A INL INH IN Dynamic Characteristics Room - 10 30 d Turn-on time t ON Full - - 40 V or V = 3 V, R = 300 , C = 35 pF Room - 8 25 ns NO NC L L d Turn-off time t OFF Full - - 30 d Break-before-make time t Room 1 - - BBM d Charge injection Q C = 1 nF, V = 0 V, V , V = 0 V, R = 0 Room - 1 - pC INJ L GEN NO NC GEN d Off-isolation OIRR Room - -78 - R = 50 , C = 5 pF, f = 1 MHz dB L L d Crosstalk X Room - -77 - TALK C Room - 7 - NO(off) d NO, NC off capacitance C V = 0 V or V+, f = 1 MHz Room - 7 - pF NC(off) IN d Channel-on capacitance C Room - 13 - ON Power Supply d Power supply current I+ V = 0 V or V+ Full - 0.004 1 A IN S18-0420-Rev. C, 23-Apr-18 Document Number: 76618 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000