Product Information

DG9411EDL-T1-GE3

DG9411EDL-T1-GE3 electronic component of Vishay

Datasheet
Multiplexer Switch ICs SPDT 1.8-5.5V 2:1 Multiplexer

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7578 ea
Line Total: USD 0.76

56192 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.3189

56192 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.7578
10 : USD 0.6302
100 : USD 0.4899
500 : USD 0.4244
1000 : USD 0.3531
3000 : USD 0.3243
6000 : USD 0.3105
9000 : USD 0.3105
24000 : USD 0.3105

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Channels
On Resistance - Max
On Time - Max
Off Time - Max
Operating Supply Voltage
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Product
Configuration
Supply Voltage - Min
Supply Voltage - Max
Mounting Style
Packaging
Supply Type
Brand
Off Isolation - Typ
Supply Current - Max
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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DG9411E www.vishay.com Vishay Siliconix Powered-off Protection, 6 , 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DESCRIPTION FEATURES The DG9411E is a high performance single-pole, Low switch on-resistance (6 ) double-throw (SPDT) analog switch designed for 1.8 V to 1.8 V to 5.5 V single supply operation Available 5.5 V operation with a single power rail. Powered-off protection Fabricated with high density CMOS technology, the device Available Control logic inputs can go over V+ up to 5.5 V achieves low on resistance of 6 and switch off capacitance of 7 pF at a 5 V power supply and low power Low parasitic capacitance, 7 pF at switch off consumption, and fast switching speeds. Low charge injection, 1 pC The DG9411E can handle both analog and digital signals Break before make switching and permits signals with amplitudes of up to V+ to be Latch-up performance exceeds 200 mA per JESD 78 transmitted in either direction. Its control logic inputs can go over V+ up to 5.5 V. It features break before make switching ESD tested performance. - 7000 V human body model (JS-001) A powered-off protection circuit is built into the switch to - 1000 V charge device model (JS-002) prevent an abnormal current flow from COM pin to V+ during the power-down condition. Each output pin can withstand Material categorization: for definitions of compliance greater than 7 kV (human body model). please see www.vishay.com/doc 99912 Operation temperature is specified from -40 C to +85 C. Note The DG9411E is available in the compact SC-70-6L * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For package. example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Battery powered devices Smartphones and tablets Consumer and computing Portable instrumentation Medical equipment FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SC-70 TRUTH TABLE LOGIC NC NO IN NO (Source ) 0On Off 1 6 1 1Off On V+ COM 2 5 Notes Logic 0 0.8 V GND NC (Source ) 3 4 2 Logic 1 2.4 V Top view ORDERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER Device marking -40 C to +85 C SC-70-6 DG9411EDL-T1-GE3 H7 S18-0419-Rev. C, 23-Apr-18 Document Number: 76294 1 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DG9411E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT V+, COM, NC, NO, IN reference to GND -0.3 to 6 V Continuous current (any terminal) 50 mA Peak current (pulsed at 1 ms, 10 % duty cycle) 200 Storage temperature -65 to +150 C a b Power dissipation (packages) 6-pin SC-70 250 mW ESD / HBM JS-001 7000 V ESD / CDM JS-002 1000 Latch up Per JESD78 with 1.5 x voltage clamp 200 mA Notes a. All leads welded or soldered to PC board b. Derate 3.1 mW/C above 70 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 5 V) TEST CONDITIONS LIMITS UNLESS OTHERWISE SPECIFIED -40 C to +85 C a PARAMETER SYMBOL TEMP. UNIT V+ = 5 V, 10 % b c b MIN. TYP. MAX. e V = 0.8 V or 2.4 V IN Analog Switch V , V NO NC d Analog signal range Full 0 - V+ V V COM Room - 6 8 d Drain-source on-resistance R V+ = 4.5 V, V = 3 V, I , I = 10 mA DS(on) COM NO NC Full - 8 10 R d DS(on) R flatness V+ = 5 V, V = 1.5 V, 3.5 V, I , I = 10 mA Room - 0.4 - DS(on) COM NO NC flatness d R match R V+ = 4.5 V, V = 3 V, I , I = 10 mA Room - 0.04 0.2 DS(on) DS(on) COM NO NC Room -1.5 - 1.5 I , NO(off) I Full -4 - 4 NC(off) V+ = 5.5 V, f Switch-off leakage current V , V = 1 V / 4.5 V, V = 4.5 V / 1 V NO NC COM Room -1 - 1 I nA COM(off) Full -4 - 4 Room -1 - 1 V+ = 5.5 V, f Channel-on leakage current I COM(on) V , V = V = 1 V / 4.5 V NO NC COM Full -4 - 4 V+ = 0 V, V = 5 V, NO/NC open, V = GND Full - - 2 COM IN Power-down leakage I A PD V+ = 0 V, V , V = 5 V, COM open, V = GND Full - - 2 NO NC IN Digital Control Input high voltage V Full 2.4 - - INH V Input low voltage V Full - - 0.8 INL d Input capacitance C Full - 6 - pF IN Input current I or I V = 0 V or V+ Full -1 - 1 A INL INH IN Dynamic Characteristics Room - 10 30 d Turn-on time t ON Full - - 32 V or V = 3 V, R = 300 , C = 35 pF Room - 8 24 ns NO NC L L d Turn-off time t OFF Full - - 26 d Break-before-make time t Room 1 - - BBM d Charge injection Q C = 1 nF, V = 0 V, V , V = 0 V, R = 0 Room - 1 - pC INJ L GEN NO NC GEN d Off-isolation OIRR Room - -78 - R = 50 , C = 5 pF, f = 1 MHz dB L L d Crosstalk X Room - -77 - TALK C Room - 7 - NO(off) d NO, NC off capacitance C V = 0 V or V+, f = 1 MHz Room - 7 - pF NC(off) IN d Channel-on capacitance C Room - 13 - ON Power Supply d Power supply current I+ V = 0 V or V+ Full - 0.004 1 A IN S18-0419-Rev. C, 23-Apr-18 Document Number: 76294 2 For technical questions, contact: analogswitchtechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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