Si1922EDH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g a TrenchFET Power MOSFET 0.198 at V = 4.5 V 1.3 GS a 100 % R Tested g 20 0.225 at V = 2.5 V 1.3 0.9 nC GS Typical ESD Protection 2100 V HBM a 0.263 at V = 1.8 V 1.3 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 Load Switch for Portable Applications SC-70 (6-LEADS) D D 1 2 S 1 6 D 1 1 Marking Code 5 G 2 G 1 2 CG XX 1 k 1 k Lot Traceability G G 1 2 and Date Code D 3 4 S 2 2 Part Code Top View Ordering Information: Si1922EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) S S 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 1.3 C a T = 70 C 1.3 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 1.3 A b, c T = 70 C 1.2 A A Pulsed Drain Current I 4 DM T = 25 C 1 C Continuous Source-Drain Diode Current I S b, c T = 25 C 0.61 A T = 25 C 1.25 C T = 70 C 0.8 C Maximum Power Dissipation P W D b, c T = 25 C 0.74 A b, c T = 70 C 0.47 A Operating Junction and Storage Temperature Range T , T C - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 130 170 thJA C/W Steady State R 80 100 Maximum Junction-to-Foot (Drain) thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 C/W. Document Number: 67192 www.vishay.com S11-2307-Rev. B, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1922EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1 V GS(th) DS GS D V = 0 V, V = 8 V 25 DS GS Gate-Source Leakage I A GSS V = 0 V, V = 4.5 V 1 DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 4 A D(on) DS GS V = 4.5 V, I = 1 A 0.165 0.198 GS D a Drain-Source On-State Resistance R V = 2.5 V, I = 1 A 0.187 0.225 DS(on) GS D V = 1.8 V, I = 0.2 A 0.210 0.263 GS D a Forward Transconductance g V = 4 V, I = 1.5 A 4 S fs DS D b Dynamic V = 10 V, V = 8 V, I = 1.5 A 1.6 2.5 DS GS D Total Gate Charge Q g 0.9 1.8 nC Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1.5 A 0.1 gs DS GS D Gate-Drain Charge Q 0.2 gd Gate Resistance R f = 1 MHz 0.4 1.9 3.8 k g Turn-On Delay Time t 43 65 d(on) Rise Time t 80 120 V = 10 V, R = 8.3 r DD L I 1.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 480D GEN g 720 d(off) Fall Time t 220 330 f ns Turn-on Delay Time t 22 33 d(on) Rise Time tr V = 10 V, R = 8.3 46 70 DD L I 1.2 A, V = 8 V, R = 1 Turn-Off Delay Time t D GEN g 645 968 d(off) Fall Time tr 215 323 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 1 S C A Pulse Diode Forward Current I 4 SM Body Diode Voltage V I = 1.2 A, V = 0 V 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 918 ns rr Body Diode Reverse Recovery Charge Q 24 nC rr I = 1.2 A, dI/dt = 100 A/s, T = 25 C F J 5 Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67192 2 S11-2307-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000