X-On Electronics has gained recognition as a prominent supplier of SI1965DH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1965DH-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1965DH-T1-GE3 Vishay

SI1965DH-T1-GE3 electronic component of Vishay
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Part No.SI1965DH-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 12V 1.3A 1.25W 390mohm 4.5V
Datasheet: SI1965DH-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1638 ea
Line Total: USD 491.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1765
6000 : USD 0.1748
9000 : USD 0.1716

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2338
6000 : USD 0.2182

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6607
10 : USD 0.5457
100 : USD 0.4073
500 : USD 0.32
1000 : USD 0.2473

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1638
6000 : USD 0.1638
9000 : USD 0.1638
15000 : USD 0.1638
30000 : USD 0.1638

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1909

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1495
10 : USD 0.5419
100 : USD 0.2935
500 : USD 0.2371
1000 : USD 0.1878
3000 : USD 0.1734
6000 : USD 0.1642
9000 : USD 0.1519
24000 : USD 0.1468

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 42
Multiples : 1
42 : USD 0.6319
50 : USD 0.6255
100 : USD 0.6191
250 : USD 0.6128
500 : USD 0.6005

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1711

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SI1965DH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1965DH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1965DH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.390 at V = - 4.5 V - 1.3 GS TrenchFET Power MOSFET - 12 0.535 at V = - 2.5 V - 1.2 1.7 nC GS Compliant to RoHS Directive 2002/95/EC 0.710 at V = - 1.8 V - 1.1 GS APPLICATIONS Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) S S 1 2 S 1 6 D 1 1 Marking Code 5 G 2 G 1 2 DE XX G G 1 2 Lot Traceability and Date Code D 3 4 S 2 2 Part Code Top View D D 1 2 Ordering Information: Si1965DH-T1-E3 (Lead (Pb)-free) P-Channel MOSFET P-Channel MOSFET Si1965DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V - 12 Drain-Source Voltage DS V Gate-Source Voltage V 8 GS a T = 25 C - 1.3 C T = 70 C - 1.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 1.14 A b, c T = 70 C - 0.9 A A Pulsed Drain Current I - 3 DM = 25 C T - 1 C Continuous Source-Drain Diode Current I b, c S T = 25 C - 0.6 A T = 25 C 1.25 C T = 70 C 0.8 C Maximum Power Dissipation P W D b, c T = 25 C 0.74 A b, c T = 70 C 0.47 A Operating Junction and Storage Temperature Range T , T C - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 5 s 130 170 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 80 100 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 C/W. Document Number: 68765 www.vishay.com S10-0792-Rev. B, 05-Apr-10 1 YYSi1965DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 12 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 85 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 3 A D(on) DS GS V = - 4.5 V, I = - 1.0 A 0.315 0.390 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 0.86 A 0.425 0.535 DS(on) GS D V = - 1.8 V, I = - 0.25 A 0.550 0.710 GS D a Forward Transconductance g V = - 6 V, I = - 1.0 A 2.5 S fs DS D b Dynamic Input Capacitance C 120 iss Output Capacitance C 41V = - 6 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 25 rss V = - 6 V, V = - 8 V, I = - 1.1 A 2.8 4.2 DS GS D Total Gate Charge Q g 1.7 2.6 nC Gate-Source Charge Q 0.3V = - 6 V, V = - 4.5 V, I = - 1.1 A gs DS GS D Gate-Drain Charge Q 0.4 gd Gate Resistance R f = 1 MHz 7.5 g Turn-On Delay Time t 12 20 d(on) Rise Time t 2740 r V = - 6 V, R = 6.7 DD L I - 0.9 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 1525 D GEN g d(off) Fall Time t 10 15 f ns Turn-On Delay Time t 25 d(on) Rise Time t 1220 r V = - 6 V, R = 6.7 DD L I - 0.9 A, V = - 8 V, R = 1 Turn-Off Delay Time t 12D GEN g 20 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 1.0 S C A a Pulse Diode Forward Current I - 3.0 SM Body Diode Voltage V I = - 0.9 A - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 0.9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9.5 a ns Reverse Recovery Rise Time t 11.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68765 2 S10-0792-Rev. B, 05-Apr-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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