Product Information

SiC631CD-T1-GE3

SiC631CD-T1-GE3 electronic component of Vishay

Datasheet
Gate Drivers 55A, 4.5V - 24V DrMOS VRPower

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.491 ea
Line Total: USD 1.49

7455 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7455 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.491
10 : USD 1.3365
30 : USD 1.2519
100 : USD 1.1568
500 : USD 1.1123
1000 : USD 1.0933

4428 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 2.0528
10 : USD 1.7871
100 : USD 1.5697
250 : USD 1.4732
500 : USD 1.3886

     
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P GND V IN GL C GND V DRV SiC631 www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES Thermally enhanced PowerPAK MLP55-31L The SiC631 is integrated power stage solutions optimized package for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged Vishays Gen IV MOSFET technology and a in Vishays proprietary 5 mm x 5 mm MLP package, SiC631 low-side MOSFET with integrated Schottky enables voltage regulator designs to deliver up to 50 A diode continuous current per phase. Delivers in excess of 50 A continuous current, 55 A at The internal power MOSFETs utilizes Vishays 10 ms peak current state-of-the-art Gen IV TrenchFET technology that delivers High efficiency performance industry benchmark performance to significantly reduce High frequency operation up to 2 MHz switching and conduction losses. Power MOSFETs optimized for 19 V input stage The SiC631 incorporates an advanced MOSFET gate driver 5 V PWM logic with tri-state and hold-off IC that features high current driving capability, adaptive Supports PS4 mode light load requirement for IMVP8 with dead-time control, an integrated bootstrap Schottky diode, low shutdown supply current (5 V, 3 A) and zero current detection to improve light load efficiency. Under voltage lockout for V CIN The driver is also compatible with a wide range of PWM controllers, supports tri-state PWM, and 5 V PWM logic. Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 A user selectable diode emulation mode (ZCD EN ) is included to improve the light load performance. The device APPLICATIONS also supports PS4 mode to reduce power consumption when system operates in standby state. Multi-phase VRDs for computing, graphics card and memory Intel IMVP-8 VRPower delivery - V , V , V Skylake, Kabylake CORE GRAPHICS SYSTEM AGENT platforms - V for Apollo Lake platforms CCGI Up to 24 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH V OUT Gate PWM driver PWM controller Fig. 1 - SiC631 Typical Application Diagram S17-1583-Rev. D, 16-Oct-17 Document Number: 67104 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V P GND SWH V P GND SWH P V GND SWH GL P GND P GND V V DRV IN N.C. V IN N.C. V IN SiC631 www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 33 31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31 PWM 1 1 PWM 23 V V 23 SWH SWH GL GL ZCD EN 2 2 ZCD EN 22 V V 22 SWH SWH 32 CGND V 3 C 3 V CIN GND CIN 21 V V 21 SWH SWH N.C. 4 4 N.C. 20 V V 20 SWH SWH 35 BOOT BOOT 5 5 PGND 19 V V 19 SWH SWH P GND 6 6 N.C. V 18 N.C. 18 V SWH SWH 34 VIN PHASE 7 17 V V 17 7 PHASE SWH SWH V IN 8 16 V V 16 8 V V SWH SWH IN IN 9 10 11 12 13 14 15 15 14 13 12 11 10 9 Top view Bottom view Fig. 2 - SiC631 Pin Configuration PIN CONFIGURATION PIN NUMBER NAME FUNCTION 1 PWM PWM input logic The ZCD EN pin enables or disables diode emulation. When ZCD EN is LOW, diode emulation is allowed. When ZCD EN is HIGH, continuous conduction mode is forced. 2 ZCD EN ZCD EN can also be put in a high impedance mode by floating the pin. If both ZCD EN and PWM are floating, the device shuts down and consumes typically 3 A (9 A max.) current. 3V Supply voltage for internal logic circuitry CIN 5 BOOT High-side driver bootstrap voltage Pin 4 can be either left floating or connected to C . Internally it is either GND P/N P/N connected to GND or not internally connected depending on manufacturing LL LL location. 4, 6, 30, 31 N.C. G Y W W T Y W W Factory code G on line 3, pin 4 = C GND Factory code T on line 3, pin 4 = not internally connected 7 PHASE Return path of high-side gate driver 8 to 11, 34 V Power stage input voltage. Drain of high-side MOSFET IN 12 to 15, 28, 35 P Power ground GND 16 to 26 V Phase node of the power stage SWH 27, 33 GL Low-side MOSFET gate signal 29 V Supply voltage for internal gate driver DRV 32 C Signal ground GND ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE OPTION SiC631CD-T1-GE3 PowerPAK MLP55-31L SiC631 5 V PWM optimized SiC631DB Reference board S17-1583-Rev. D, 16-Oct-17 Document Number: 67104 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P V GND SWH P V GND SWH P GND V SWH P GL GND P GND V V IN DRV V N.C. IN V N.C. IN

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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