SiR472DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.012 at V = 10 V 20 GS Low Thermal Resistance PowerPAK COMPLIANT 30 6.8 nC 0.015 at V = 4.5 V 20 GS Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Rectifier Operation PowerPAK SO-8 100 % R Tested g 100 % UIS Tested D S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S 3 G Notebook CPU Core 4 - High-Side Switch D G 8 D 7 D 6 D 5 S Bottom View Ordering Information: SiR472DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage DS 30 V V Gate-Source Voltage 20 GS g T = 25 C C 20 g T = 70 C 20 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 14 b, c T = 70 C A 11 A I Pulsed Drain Current DM 50 g T = 25 C C 20 Continuous Source-Drain Diode Current I S b, c T = 25 C A 3.2 Single Pulse Avalanche Current I 22 AS L = 0.1 mH Avalanche Energy E mJ 24 AS T = 25 C 29.8 C T = 70 C 19.0 C P Maximum Power Dissipation W D b, c T = 25 C A 3.9 b, c T = 70 C A 2.5 T , T Operating Junction and Storage Temperature Range J stg - 55 to 150 C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R Maximum Junction-to-Ambient t 10 s thJA 27 32 C/W R Maximum Junction-to-Case (Drain) Steady State 3.5 4.2 thJC Notes: a. Base on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiR472DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 28 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 13.8 A 0.0097 0.0120 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 12.4 A 0.0122 0.0150 GS D a g V = 15 V, I = 13.8 A 52 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 820 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 195 pF oss DS GS C Reverse Transfer Capacitance 73 rss V = 15 V, V = 10 V, I = 13.8 A 15 23 DS GS D Q Total Gate Charge g 6.8 10.2 nC Q Gate-Source Charge V = 15 V, V = 5 V, I = 13.8 A 2.5 gs DS GS D Q Gate-Drain Charge 2.3 gd R Gate Resistance f = 1 MHz 0.36 1.8 3.6 g t Turn-On Delay Time 16 24 d(on) t Rise Time V = 15 V, R = 1.4 12 18 r DD L I 11 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 24 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 816 d(on) Rise Time t 10 20 V = 15 V, R = 1.4 r DD L I 11 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 16 24 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 25 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 2.6 A 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 15 30 ns rr Body Diode Reverse Recovery Charge Q 612 nC rr I = 11 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68897 2 S-82488-Rev. C, 13-Oct-08