New Product SiR494DP Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0012 at V = 10 V 60 GS TrenchFET Gen III Power MOSFET 12 50 nC 0.0017 at V = 4.5 V 60 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S DC/DC 6.15 mm 5.15 mm 1 D S OR-ing 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR494DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 12 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 53.7 b, c T = 70 C A 43 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 15 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 11 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 C/W. Document Number: 64824 www.vishay.com S09-0874-Rev. A, 18-May-09 1New Product SiR494DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 9.5 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.1 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.001 0.0012 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0014 0.0017 GS D a g V = 10 V, I = 20 A 95 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6900 iss Output Capacitance C V = 6 V, V = 0 V, f = 1 MHz 4130 pF oss DS GS C Reverse Transfer Capacitance 1785 rss V = 6 V, V = 10 V, I = 20 A 98 150 DS GS D Q Total Gate Charge g 50 75 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 20 A 16.5 gs DS GS D Q Gate-Drain Charge 15 gd R Gate Resistance f = 1 MHz 0.2 1.05 2 g t Turn-On Delay Time 19 35 d(on) t 10 20 Rise Time V = 10 V, R = 1.0 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 48 90 d(off) Fall Time t 11 22 f ns t Turn-On Delay Time 42 80 d(on) Rise Time t 60 110 V = 10 V, R = 1.0 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 54 100 d(off) Fall Time t 54 100 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.73 1.1 V SD S t Body Diode Reverse Recovery Time 46 80 ns rr Body Diode Reverse Recovery Charge Q 44 80 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 22 a ns Reverse Recovery Rise Time t 24 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64824 2 S09-0874-Rev. A, 18-May-09