BTA208B-1000C,118 WeEn Semiconductor

BTA208B-1000C 3Q Hi-Com Triac 13 August 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where very high blocking voltage, high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only Very high voltage capability 3. Applications Compressor starting controls General purpose motor control Reversing induction motor controls e.g. vertical axis washing machines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1000 V DRM state voltage I RMS on-state current full sine wave T 102 C Fig. 1 - - 8 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 65 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 72 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 6 35 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA208B-1000C 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 13 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 23 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 20 50 mA H D j V on-state voltage I = 10 A T = 25 C Fig. 10 - 1.3 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 670 V T = 125 C (V = 67% 1000 4000 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 8 A 12 32 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s snubberless com condition gate open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208B-1000C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 SOT404 leads (one lead cropped) BTA208B-1000C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 13 August 2018 2 / 13