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BTA208S-800E,118

BTA208S-800E,118 electronic component of WeEn Semiconductor
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See Product Specifications
Part No. BTA208S-800E,118
Manufacturer: WeEn Semiconductor
Category: Triacs
Description: Thyristors - TRIACs Two-way thyristor 800V TO-252-3 RoHS
Datasheet: BTA208S-800E,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5932 ea
Line Total: USD 0.59

1439 - Global Stock
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1439 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5932
10 : USD 0.5469
25 : USD 0.5417
100 : USD 0.4937
250 : USD 0.4888
500 : USD 0.4601
1000 : USD 0.4001

617 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.014
5 : USD 0.6058
25 : USD 0.5369
34 : USD 0.4914
93 : USD 0.4641

     
Manufacturer
Product Category
Brand
Rohs
Package
Type
Voltage - Off State Max
Current - On State It Rms Max
Voltage - Gate Trigger Vgt Max
Current - Gate Trigger Igt Max
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BTA208S-800E 3Q Hi-Com Triac Rev. 05 14 April 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT428 surface-mountable plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity. Thesensitive gatseries is intended for interfacing with low power drivers including microcontrollers. 1.2 Features and benefits 3Q technology for improved noise High commutation capability maximum immunity false trigger immunity Direct interfacing with low level power High voltage capability drivers and microcontrollers Planar passivated for voltage Good immunity to false turn-on by ruggedness and reliability dV/dt Surface-mountable package Triggering in three quadrants only 1.3 Applications Electronic thermostats General purpose motor controls 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state --800V DRM voltage I non-repetitive peak full sine wave T =25C --65 A TSM j(init) on-state current t =20ms see Figure 4 p see Figure 5 I RMS on-state current full sine wave T 102 C --8 A T(RMS) mb see Figure 1 see Figure 2 see Figure 3 DPAKBTA208S-800E NXP Semiconductors 3Q Hi-Com Triac Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V =12V I = 0.1 A T2+ G+ --10 mA GT D T T =25C see Figure 7 j V =12V I = 0.1 A T2+ G- --10 mA D T T =25C see Figure 7 j V =12V I = 0.1 A T2- G- --10 mA D T T =25C see Figure 7 j 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G 3 G gate sym051 mb T2 mounting base main terminal 2 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208S-800E DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BTA208S-800E All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 14 April 2011 2 of 14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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