Product Information

AQD-D4U8GE21-SG

AQD-D4U8GE21-SG electronic component of Advantech

Datasheet
Memory Modules 8G ECC DDR4-2133 512X8 1.2V SAM

Manufacturer: Advantech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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AQD-D4U8GE21-SG
Advantech

1 : USD 184.8803
5 : USD 184.1572
10 : USD 177.3357
N/A

Obsolete
     
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288Pin DDR4 2133 ECC UDIMM 8GB Based on 512Mx8 AQD-D4U8GE21-SG Advantech AQD-D4U8GE21-SG Datasheet Rev. 1.0 2015-03-16 1 288Pin DDR4 2133 ECC UDIMM 8GB Based on 512Mx8 AQD-D4U8GE21-SG Description Pin Identification Symbol Function DDR4 ECC U-DIMMs are high-speed and low power A0A14 SDRAM address bus memory modules that use 512Mx8bits DDR4 SDRAM in BA0, BA1 SDRAM bank select FBGA package and a 4K-bit serial EEPROM on a 288-pin BG0, BG1 SDRAM bank group select RAS n SDRAM row address strobe printed circuit board. DDR4 ECC U-DIMMs are dual CAS n SDRAM column address strobe In-Line memory modules and are intended for mounting WE n SDRAM write enable into 288-pin edge connector sockets. CS0 n, CS1 n DIMM Rank Select Lines The synchronous design allows precise cycle control with CKE0, CKE1 SDRAM clock enable lines SDRAM on-die termination control the use of system clock. Data I/O transactions are ODT0, ODT1 lines possible on both edges of DQS. The large range of ACT n SDRAM activate operation frequencies and programmable latencies allow DQ0DQ63 DIMM memory data bus the same device to be useful for a variety of high CB0CB7 DIMM ECC check bits Input data mask and data bus bandwidth and high performance memory system DM n/DBI n/ inversion applications. SDRAM data strobes DQS0 tDQS8 t (positive line of differential pair) Features SDRAM data strobes DQS0 cDQS8 c RoHS compliant (negative line of differential pair) JEDEC standard 1.2V 0.06V power supply SDRAM clocks CK0 t, CK1 t (positive line of differential pair) VDDQ=1.2V 0.06V SDRAM clocks Clock Freq: 1067MHZ for 2133Mb/s/Pin. CK0 c, CK1 c (negative line of differential pair) Programmable CAS Latency: 10,11,12,13,14,15,16 PARITY SDRAM parity input VDD SDRAM I/O and core power supply Programmable Additive Latency (Posted /CAS): SDRAM command/address 0,CL-2 or CL-1 clock VREFCA reference supply Programmable /CAS Write Latency (CWL) VSS Power supply return (ground) = 11, 14(DDR4-2133) Serial SPD EEPROM positive VDDSPD power supply 8 bit pre-fetch 2 SCL I C serial bus clock for EEPROM Burst Length: 4, 8 2 I C serial bus data line for SDA Bi-directional Differential Data-Strobe EEPROM 2 On Die Termination with ODT pin I C slave address select for SA0SA2 EEPROM Serial presence detect with EEPROM ALERT n SDRAM ALERT n On DIMM Thermal Sensor VPP SDRAM Supply Asynchronous reset RESET n Set DRAMs to a Known State SPD signals a thermal event has EVENT n occurred VTT SDRAM I/O termination supply RFU Reserved for future use NC No Connection 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
ADVANTECH CORPORATION
ADVANTECH B+B SMARTWORKS
Advantech Corp

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