1N6638US, 1N6642US, 1N6643US
Qualified Levels:
VOIDLESS HERMETICALLY SEALED
JAN, JANTX,
Available on
SWITCHING DIODES
JANTXV and JANS
commercial
versions
Qualified per MIL-PRF-19500/578
DESCRIPTION
This popular surface mount equivalent JEDEC registered switching/signal diodes are military
qualified and available with internal metallurgical bonded construction. These small low
capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a
D-5D package. They may be used in a variety of fast switching applications including
computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire
memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety
of other switching/signal diodes.
Important: For the latest information, visit our website 1N6638US, 1N6642US, 1N6643US
MECHANICAL and PACKAGING
CASE: Voidless hermetically sealed hard glass.
TERMINALS: Tin-Lead plate with >3% Lead. Solder dip is available upon request.
MARKING: Body painted and alpha numeric.
POLARITY: Cathode indicated by band.
Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N6638 US (e3)
Reliability Level RoHS Compliance
JAN = JAN Level e3 = RoHS compliant (available
JANTX = JANTX Level on commercial grade only)
JANTXV = JANTXV Level Blank = non-RoHS compliant
JANS = JANS Level
Blank = commercial
Surface Mount Package
JEDEC type number
See Electrical Characteristics
table
SYMBOLS & DEFINITIONS
Symbol Definition
V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
BR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
V
RWM
range.
V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
F
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
I
R
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
t the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is
rr
reached.
o
ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise noted.
MAXIMUM MAXIMUM DC REVERSE CURRENT REVERSE MAXIMUM MAXIMUM
FORWARD RECOVERY FORWARD JUNCTION
VOLTAGE TIME RECOVERY CAPACITANCE
V @ I t VOLTAGE AND f = 1 MHz
F F rr
TYPE
(Note 1) TIME Vsig = 50 mV
NUMBER
I I I I I =200mA, t =1ns (p-p)
R1 R2 R3 R4 F r
V = V =V V =20 V V =V
R R RWM R R RWM
20 V T = T = t V =0 V V =1.5 V
V
A A FRM fr R R
o o
+150 C +150 C
V @ mA V @ mA nA nA ns
A A V ns pf pf
1N6638US 0.8 V @ 10 mA 1.1 V @ 200 mA 35 500 50 100 4.5 5.0 20 2.5 2.0
1N6642US 0.8 V @ 10 mA 1.2 V @ 100 mA 25 500 50 100 5.0 5.0 20 5.0 2.8
1N6643US 0.8 V @ 10 mA 1.2 V @ 100 mA 50 500 75 100 6.0 5.0 20 5.0 2.8
NOTE: 1. Reverse Recovery Time Test Conditions I =I =10 mA, I = 1.0 mA, C=3 pF, R = 100 ohms.
F R R(REC) L
T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) 2014 Microsemi Corporation Page 2 of 5