AO3423 20V P-Channel MOSFET General Description Product Summary V -20V The AO3423 uses advanced trench technology to provide DS excellent R , low gate charge and operation with gate DS(ON) I (at V =-10V) -2A D GS voltages as low as 2.5V. This device is suitable for use as R (at V = -10V) < 92m DS(ON) GS a load switch applications. R (at V = -4.5V) < 118m DS(ON) GS R (at V = -2.5V) < 166m DS(ON) GS Typical ESD protection HBM Class 2 SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --2200 VV DDSS Gate-Source Voltage V 12 V GS T =25C -2 A Continuous Drain I D Current T =70C -2 A A C Pulsed Drain Current I -17 DM T =25C 1.4 A P W D B Power Dissipation T =70C 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 65 90 C/W R A D JA Maximum Junction-to-Ambient Steady-State 85 125 C/W Steady-State Maximum Junction-to-Lead R 43 60 C/W JL Rev 5: Nov 2011 www.aosmd.com Page 1 of 5 AO3423 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 12V I Gate-Body leakage current 10 A GSS DS GS V V =V , I =-250 Gate Threshold Voltage -0.5 -0.85 -1.2 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -17 A GS DS D(ON) V =-10V, I =-2A 76 92 GS D m T =125C 99 119 J R Static Drain-Source On-Resistance DS(ON) V =-4.5V, I =-2A 94 118 m GS D V =-2.5V, I =-1A 128 166 m GS D g Forward Transconductance V =-5V, I =-2A 6.8 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.76 -1 V SD S GS I Maximum Body-Diode Continuous Current -1.5 A S DYNAMIC PARAMETERS C Input Capacitance 250 325 400 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 40 63 85 pF GS DS oss C Reverse Transfer Capacitance 22 37 52 pF rss R Gate resistance V =0V, V =0V, f=1MHz 11.2 17 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 3.2 4.5 nC g V =-4.5V, V =-10V, I =-2A Q Gate Source Charge 0.6 nC GS DS D gs Q Gate Drain Charge 0.9 nC gd t Turn-On DelayTime ns 11 D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1100VV,, RR ==55,, 55..55 nnss r GS DS L R =3 t Turn-Off DelayTime 22 ns GEN D(off) t Turn-Off Fall Time 8 ns f t I =-2A, dI/dt=100A/s 6.1 rr Body Diode Reverse Recovery Time F ns Q I =-2A, dI/dt=100A/s 1.4 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2011 www.aosmd.com Page 2 of 5