AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide N-Channel P-Channel excellent R and low gate charge. This DS(ON) V = 30V -30V DS complementary N and P channel MOSFET configuration I = 8A (V =10V) -7A (V =-10V) D GS GS is ideal for low Input Voltage inverter applications. R R DS(ON) DS(ON) < 20m (V =10V) < 22m (VGS=-10V) GS < 28m (V =4.5V) < 40m (VGS=-4.5V) GS 100% UIS Tested 100% UIS Tested 100% R Tested 100% R Tested g g ESD Protected SOIC-8 D2 D1 Top View Bottom View Top View S2 D2 G2 D2 G2 S1 D1 G1 G1 D1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 20 20 V GS T =25C 8 -7 A Continuous Drain I D Current T =70C 6.5 -6 A A C Pulsed Drain Current I 40 -40 DM C Avalanche Current I , I 19 27 A AS AR C Avalanche energy L=0.1mH E , E 18 36 mJ AS AR T =25C 2 2 A P W D B Power Dissipation T =70C 1.3 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R A D JA Maximum Junction-to-Ambient Steady-State 74 90 C/W Steady-State Maximum Junction-to-Lead R 32 40 C/W JL Rev 2: Jan. 2011 www.aosmd.com Page 1 of 9 AO4616 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 30 V DSS D GS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V =16V 10 A GSS DS GS V Gate Threshold Voltage V =V I =250A 1.2 1.8 2.4 V GS(th) DS GS D V =10V, V =5V I On state drain current 40 A D(ON) GS DS V =10V, I =8A 16.5 20 GS D m R Static Drain-Source On-Resistance T =125C 23 28 DS(ON) J V =4.5V, I =6A 19.5 28 m GS D g Forward Transconductance V =5V, I =8A 30 S DS D FS I =1A,V =0V V Diode Forward Voltage 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 600 740 888 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 77 110 145 pF GS DS oss C Reverse Transfer Capacitance 50 82 115 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.7 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 12 15 18 nC g Q (4.5V) Total Gate Charge 6 7.5 9 nC g V =10V, V =15V, I =8A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3 nC gd t Turn-On DelayTime 5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =1.8, 3.5 ns r GS DS L R =3 t Turn-Off DelayTime 19 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =8A, dI/dt=500A/s 6 rr Body Diode Reverse Recovery Time F 8 10 ns Q I =8A, dI/dt=500A/s 14 nC rr Body Diode Reverse Recovery Charge F 18 22 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Jan. 2011 www.aosmd.com Page 2 of 9