AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6926 is designed to provide a high efficiency Q1 30V synchronous buck power stage with optimal layout and V 30V DS board space utilization. It includes two specialized 50A I (at V =10V) 44A D GS MOSFETs in a dual Power DFN5x6A package. The Q1 <11m <8.5m R (at V =10V) DS(ON) GSHigh Sid MOSFET is desgined to minimze switching <14m <12m R (at V = 4.5V) DS(ON) GS losses. The Q2Low Sid MOSFET is an SRFET that features low R to reduce conduction losses as well as DS(ON) an integrated Schottky diode with low Q and V to reduce RR f 100% UIS Tested switching losses. The AON6926 is well suited for use in 100% Rg Tested compact DC/DC converter applications. DFN5X6 Top View Bottom View PIN1 Bottom View Top View Bottom View Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max Q1 Max Q2 Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 20 V GS T =25C 44 50 Continuous Drain C I D Current T =100C 28 32 A C C Pulsed Drain Current I 100 140 DM T =25C 11 12 Continuous Drain A I A DSM Current T =70C 910 A C Avalanche Current I , I 27 15 A AS AR C Avalanche Energy L=0.1mH E , E 36 11 mJ AS AR T =25C 31 35 C P W B D Power Dissipation T =100C 12.5 14 C T =25C 1.9 2.1 A P W DSM A Power Dissipation =70C T 1.2 1.3 A T , T Junction and Storage Temperature Range -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units A t 10s 29 24 35 29 Maximum Junction-to-Ambient C/W R JA A D Steady-State Maximum Junction-to-Ambient 56 50 67 60 C/W Maximum Junction-to-Case Steady-State R 3.4 3 4 3.6 C/W JC Rev0 : July 2010 www.aosmd.com Page 1 of 1 AON6926 Q1 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V DSS D GS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =125C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.5 2 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 100 A D(ON) GS DS V =10V, I =20A 8.8 11 GS D m R Static Drain-Source On-Resistance T =125C 12 15 DS(ON) J m V =4.5V, I =20A 11.2 14 GS D g Forward Transconductance V =5V, I =20A 55 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V SD S GS I Maximum Body-Diode Continuous Current 35 A S DYNAMIC PARAMETERS C Input Capacitance 920 1150 1380 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 125 180 235 pF oss GS DS C Reverse Transfer Capacitance 60 105 150 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.55 1.1 1.65 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 16 20 24 nC g Q (4.5V) Total Gate Charge 7 9.5 11.4 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2.7 nC gs Q Gate Drain Charge 5nC gd t Turn-On DelayTime 6.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 2ns r GS DS L t R =3 Turn-Off DelayTime GEN 17 ns D(off) t Turn-Off Fall Time 3.5 ns f t I =20A, dI/dt=500A/s 7 rr Body Diode Reverse Recovery Time F 8.7 10.5 ns Q I =20A, dI/dt=500A/s 11 nC rr Body Diode Reverse Recovery Charge F 13.5 16 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends on the DSM JA user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : July 2010 www.aosmd.com Page 2 of 10