X-On Electronics has gained recognition as a prominent supplier of AON7462 across the USA, India, Europe, Australia, and various other global locations. AON7462 are a product manufactured by Alpha & Omega. We provide cost-effective solutions for AON7462, ensuring timely deliveries around the world.

AON7462 Alpha & Omega

AON7462 electronic component of Alpha & Omega
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Part No.AON7462
Manufacturer: Alpha & Omega
Category: Unclassified
Description: DISCRETE N CHANNEL FET
Datasheet: AON7462 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2644 ea
Line Total: USD 0.26 
Availability - 0
  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.4478

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3
Multiples : 1
3 : USD 0.5292
25 : USD 0.4557
55 : USD 0.3087
152 : USD 0.294

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the AON7462 from our Alpha & Omega manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AON7462 and other electronic components in the Alpha & Omega manufacturer and beyond.

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AON7462 300V,2.5A N-Channel MOSFET General Description Product Summary The AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V 150 V DS performance and robustness in popular AC-DC 2.5A I (at V =10V) D GS applications.By providing low R , C and C along with DS(on) iss rss < 1.5 R (at V =10V) DS(ON) GS guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g DFN 3x3A EP Top View Bottom View D G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 300 V DS V Gate-Source Voltage 30 V GS T=25C 2.5 Continuous Drain C I D B Current T =100C A 1.6 C C Pulsed Drain Current I 7.2 DM T =25C 0.9 Continuous Drain A I A DSM Current T =70C 0.7 A C Avalanche Current I 1.4 A AR C Repetitive avalanche energy E 29 mJ AR G Single pulsed avalanche energy E 58 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns W T =25C 25 C P B D Power Dissipation W T =100C 10 C T =25C 3.1 A P W A DSM Power Dissipation T =70C 2 A T , T Junction and Storage Temperature Range -50 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 4.2 5 C/W JC Rev0: Feb 2011 www.aosmd.com Page 1 of 6 AON7462 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 300 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 350 V D GS J BV DSS o Zero Gate Voltage Drain Current ID=250A, VGS=0V 0.3 V/ C /TJ V =300V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =240V, T =125C 10 DS J I V =0V, V =30V 100 Gate-Body leakage current n GSS DS GS V V =5V I =250A 3.5 4.2 4.5 V Gate Threshold Voltage GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =0.9A 1.2 1.5 DS(ON) GS D g Forward Transconductance V =40V, I =0.9A 1.5 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.8 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S I Maximum Body-Diode Pulsed Current 9A SM DYNAMIC PARAMETERS C Input Capacitance 155 197 240 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 20 30 40 pF oss GS DS C Reverse Transfer Capacitance 2pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.9 3.8 5.7 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 3.5 4.6 5.6 nC g Q V =10V, V =240V, I =0.9A Gate Source Charge 1.3 nC gs GS DS D Q Gate Drain Charge 1.5 nC gd t Turn-On DelayTime 17 ns D(on) t Turn-On Rise Time V =10V, V =150V, I =0.9A, 8ns r GS DS D t R =25 Turn-Off DelayTime G 26 ns D(off) t Turn-Off Fall Time 13 ns f t I =0.9A,dI/dt=100A/s,V =100V 62 95 125 rr Body Diode Reverse Recovery Time F DS ns Q I =0.9A,dI/dt=100A/s,V =100V 0.14 0.22 0.3 C rr Body Diode Reverse Recovery Charge F DS 2 A. The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A Dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) 2 G.These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. L=60mH, I =1.4A, V =150V, R =10 , Starting T =25C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Feb 2011 www.aosmd.com Page 2 of 6

Alpha & Omega Semiconductor
Alpha & Omega Semiconductor Inc
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductors
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