AOP605

AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AOP605/L uses advanced trench technology to V (V) = 30V -30V DS provide excellent R and low gate charge. The DS(ON) I = 7.5A (V = 10V) -6.6A (V = -10V) GS GS D complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. R DS(ON) AOP605 and AOP605L are electrically identical. -RoHS Compliant < 28m (V = 10V) < 35m (V = -10V) GS GS -AOP605L is Halogen Free < 43m (V = 4.5V) < 58m (V = -4.5V) GS GS PDIP8 D2 D1 Top View Bottom View 1 8 S2 D2 2 7 G2 D2 3 6 S1 D1 4 5 G1 D1 G2 G1 S2 S1 PDIP-8 p-channel n-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol Max p-channel Units Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 20 20 V GS T =25C Continuous Drain 7.5 -6.6 A A Current T =70C I 6 -5.3 A A D B Pulsed Drain Current I 30 -30 DM T =25C 2.5 2.5 A P W D Power Dissipation T =70C 1.6 1.6 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 40 50 C/W R JA A Maximum Junction-to-Ambient Steady-State 67 80 C/W C Steady-State R 33 40 C/W Maximum Junction-to-Lead JL Thermal Characteristics: p-channel Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 38 50 C/W R JA A Maximum Junction-to-Ambient Steady-State 66 80 C/W C Steady-State R 30 40 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd.AOP605 n-channel MOSFET Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V DSS D GS V =24V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V =V I =250A V Gate Threshold Voltage 1 1.8 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 30 A GS DS D(ON) V =10V, I =7.5A 22.6 28 GS D m R Static Drain-Source On-Resistance T =125C DS(ON) J V =4.5V, I =6.0A 33 43 m GS D g Forward Transconductance V =5V, I =7.5A 12 16 S FS DS D I =1A, V =0V V Body Diode Forward Voltage 0.76 1 V SD S GS I Maximum Body-DiodeContinuous Current 4 A S DYNAMIC PARAMETERS C Input Capacitance 680 820 pF iss V =0V, V =15V, f=1MHz C Output Capacitance. 102 pF GS DS oss C Reverse Transfer Capacitance 77 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.2 2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 13.84 16.6 nC g Q Total Gate Charge 6.74 8.1 nC g V =4.5V, V =15V, I =7.5A GS DS D Q Gate Source Charge 1.82 nC gs Q Gate Drain Charge 3.2 nC gd t Turn-On DelayTime 4.6 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =2.0, 4.1 ns r GS DS L R =6 t Turn-Off DelayTime 20.6 ns GEN D(off) t Turn-Off Fall Time 5.2 ns f t Body Diode Reverse Recovery time I =7.5A, dI/dt=100A/s 16.5 20 ns rr F Q Body Diode Reverse Recovery charge I =7.5A, dI/dt=100A/s 7.8 nC rr F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev 4 : Jan 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd.