BLF188XRGJ Ampleon

BLF188XRGJ electronic component of Ampleon Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BLF188XRGJ MOSFETs across the USA, India, Europe, Australia, and various other global locations. BLF188XRGJ MOSFETs are a product manufactured by Ampleon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BLF188XRGJ
Manufacturer: Ampleon
Category: MOSFETs
Description: Trans MOSFET N-CH 135V 5-Pin SOT-1248C T/R
Datasheet: BLF188XRGJ Datasheet (PDF)
Price (USD)
100: USD 274.6351 ea
Line Total: USD 27463.51 
Availability : 0
  
QtyUnit Price
100$ 274.6351

Availability 0
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 274.6351

   
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We are delighted to provide the BLF188XRGJ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF188XRGJ and other electronic components in the MOSFETs category and beyond.

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BLF188XRG Power LDMOS transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 108 50 1200 26.5 83 pulsed RF 108 50 1400 28 72 pulsed RF 81.4 50 1200 25.8 85 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF188XRG Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 1 2 1 2drain2 3gate1 3 5 4gate2 5 3 4 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF188XRG - earless flanged LDMOST ceramic package 4 leads SOT1248C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 135 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg 1 T junction temperature - 225 C j 1 Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 2 R thermal resistance from junction to case T = 150 C 0.10 K/W th(j-c) j 3 Z transient thermal impedance from junction T =150 C t =100 s 0.03 K/W th(j-c) j p to case =20 % 1 T is the junction temperature. j 2 R is measured under RF conditions. th(j-c) 3 See Figure 1. BLF188XRG 2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 1 September 2015 2 of 13

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