BLF6G21-10G112 Ampleon

BLF6G21-10G112 electronic component of Ampleon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BLF6G21-10G112 across the USA, India, Europe, Australia, and various other global locations. BLF6G21-10G112 are a product manufactured by Ampleon. We provide cost-effective solutions for BLF6G21-10G112, ensuring timely deliveries around the world.

Part No.	BLF6G21-10G112
Manufacturer:	Ampleon
Category:	Unclassified
Description:	RF Components A 10GHz, 6 watts, GaN on SiC, Envelope Tracking-capable RF Power Amplifier.
Datasheet:	BLF6G21-10G112 Datasheet (PDF)

Price (USD)

160: USD 35.8009 ea
Line Total: USD 5728.14

Availability : 0

Qty	Unit Price
160	$ 35.8009

BLF6G21-10G112 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 12 Aug to Mon. 18 Aug

MOQ : 160
Multiples : 160

Qty	Unit Price
160	$ 35.8009

Specifications

Manufacturer Ampleon Ampleon
Product Category Unclassified Unclassified

We are delighted to provide the BLF6G21-10G112 from our Ampleon manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF6G21-10G112 and other electronic components in the Ampleon manufacturer and beyond.

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Additional Infomation About Product

The BLF6G21-10G112 from Ampleon is an internally matched single-pole 10-GHz GaN RF power transistor designed for tactical and telecom applications. It operates from 8 to 10 GHz and is designed for high power and high gain performance. Output power of up to 112 W (with 10.5 dB of gain), and efficiency of up to 38% can be obtained with this device. It features a self-protection process with integrated overvoltage, overloaded and over-temperature detection. The transistor is housed in a ceramic surface mount package and operates from a single 50 V supply.

HS Compliance

Tariff Desc

8541290075

Ampleon USA Inc. may also be referenced as

AP3

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