BLF884P112 Ampleon

BLF884P112 electronic component of Ampleon
BLF884P112 Ampleon
BLF884P112 RF MOSFET Transistors
BLF884P112  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BLF884P112 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BLF884P112 RF MOSFET Transistors are a product manufactured by Ampleon. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

Part No.BLF884P112
Manufacturer:Ampleon
Category:RF MOSFET Transistors
Description:RF Components
High-power 2-stage LDMOS power amplifier, offering power up to 112W.
Datasheet:
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Price (USD)
  
60: USD 210.5538 ea
Line Total: USD 12633.23 
Availability : 0
  
QtyUnit Price
60$ 210.5538
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 60
Multiples : 60
QtyUnit Price
60$ 210.5538

   
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We are delighted to provide the BLF884P112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF884P112 and other electronic components in the RF MOSFET Transistors category and beyond.

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The BLF884P112 part produced by Ampleon is a transistor designed to be used in high gain linear cellular RF amplifiers. It has an output power of 12 W max. The BLF884P112 operates between 70 MHz and 4 GHz, with a 24 V supply voltage, a 150 W P1dB and gain of 10.4 dB at 2.1494 GHz. The transistor offers excellent linearity and gain flatness, as well as high gain and low conductivity. The BLF884P112 is also designed to provide superior thermal stability, making it ideal for high-efficiency, high linearity base station applications.

Tariff Desc

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