TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E SEPTEMBER 2007 PACKAGE S PACKAGE SM Converts Light Intensity to Output Voltage SIDELOOKER SURFACE MOUNT Monolithic Silicon IC Containing (FRONT VIEW) SIDELOOKER Photodiode, Operational Amplifier, and (FRONT VIEW) Feedback Components High Sensitivity Single Voltage Supply Operation (2.7 V to 5.5 V) Low Noise (200 Vrms Typ to 1 kHz) Rail-to-Rail Output High Power-Supply Rejection (35 dB at 1 kHz) Compact 3-Leaded Plastic Package 1 2 3 RoHS Compliant (LF Package Only) GND V OUT DD 1 2 3 GND V OUT DD Description The TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 M. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is RoHS compliant. Functional Block Diagram Voltage Output + Available Options DEVICE T PACKAGE LEADS PACKAGE DESIGNATOR ORDERING NUMBER A TSL257 0C to 70 C 3-lead Sidelooker S TSL257 TSL257 0C to 70 C 3-lead Sidelooker Lead (Pb) Free S TSL257 LF TSL257 0C to 70 C 3-lead Surface-Mount Sidelooker Lead (Pb) Free SM TSL257SM LF Terminal Functions TERMINAL DESCRIPTIONDESCRIPTION NAME NO. GND 1 Ground (substrate). All voltages are referenced to GND. OUT 3 Output voltage V 2 Supply voltage DD Copyright 2007, TAOS Inc. The LUMENOLOGY Company Texas Advanced Optoelectronic Solutions Inc. 1001 Klein Road Suite 300 Plano, TX 75074 (972) 673-0759 www.taosinc.com 1TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E SEPTEMBER 2007 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, V (see Note 1) . 6 V DD Output current, I 10 mA O Duration of short-circuit current at (or below) 25C 5 s Operating free-air temperature range, T 25C to 85C A Storage temperature range, T 25C to 85C stg Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) 260C Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . 260C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. Recommended Operating Conditions MIN MAX UNIT Supply voltage, V 2.7 5.5 V DD Operating free-air temperature, T 0 70 C A Electrical Characteristics at V = 5 V, T = 25C, = 470 nm, R = 10 k (unless otherwise noted) DD A p L (see Notes 2 and 3) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V Dark voltage E = 0 0 15 mV D e V = 4.5 V, No Load 4.49 DD VV Maximum output voltage swingMaximum output voltage swing VV OM V = 4.5 V, R = 10 k 4 4.2 DD L 2 V Output voltage E = 1.54 W/cm , = 470 nm, Note 5 1.6 2 2.4 V O e p Temperature coefficient of dark voltage (V ) T = 0C to 70 C 15 V/ C VD D A = 428 nm, see Notes 4 and 8 1.18 p = 470 nm, see Notes 5 and 8 1.30 p 22 NN Irradiance responsivityIrradiance responsivity V/(V/( W/cmW/cm )) e = 565 nm, see Notes 6 and 8 1.58 p = 645 nm, see Notes 7 and 8 1.68 p PSRR Power supply rejection ratiopp y j f = 100 Hz, see Note 9 55 dB ac f = 1 kHz, see Note 9 35 dB ac 2 I Supply current E = 1.54 W/cm , = 470 nm, Note 5 1.9 3.5 mA DD e p NOTES: 2. Measured with R = 10 k between output and ground. L 3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. 4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength = 428 nm, p spectral halfwidth = 65 nm. 5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength = 470 nm, p spectral halfwidth = 35 nm. 6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength = 565 nm, p spectral halfwidth = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength = 645 nm, p spectral halfwidth = 25 nm. 8. Irradiance responsivity is characterized over the range V = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V versus O O Irradiance E over this range will typically have a positive extrapolated V value for E = 0. e O e 9. Power supply rejection ratio PSRR is defined as 20 log ( V (f)/ V (f)) with V (f = 0) = 5 V and V (f = 0) = 2 V. DD O DD O Copyright 2007, TAOS Inc. The LUMENOLOGY Company 2 www.taosinc.com