AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.5 FEATURES InGaP HBT Technology -50 dBc ACPR 65 MHz, +27 dBm 29 dB Gain High Efficiency Low Transistor Junction Temperature Matched for a 50 System Low Prolfi e Miniature Surface Mount Package RoHS Compliant Multi-Carrier Capability APPLICATIONS WCDMA, HSDPA and LTE Air Interfaces M52 Package Picocell, Femtocell, Home Nodes 14 Pin 7 mm x 7 mm x 1.3 mm Customer Premises Equipment (CPE) Surface Mount Module Data Cards and Terminals PRODUCT DESCRIPTION The AWB7227 is a fully matched, Multi-Chip-Module operates from a convenient +4.5 V supply and provides (MCM) designed for picocell, femtocell, and customer 29 dB of gain. The device is manufactured using an premises equipment (CPE) applications. Its high advanced InGaP HBT MMIC technology offering linearity and efficiency meet the extremely demanding state-of-the-art reliability, temperature stability, and needs of small cell infrastructure architectures. ruggedness. The self-contained 7 mm x 7 mm x 1.3 Designed for WCDMA, HSDPA, and LTE air interfaces mm surface mount package incorporates RF matching operating in the 2.11 GHz to 2.17 GHz band, the networks optimized for output power, efficiency, and AWB7227 delivers up to +27 dBm of WCDMA (64 linearity in a 50 system. DPCH) power with an ACPR better than -50 dBc. It Vcc 1 Vcc 2 Matching Matching RF Input Network Network Bias Network Matching Matching Network Network RF Output Power Detector Bias Network VREF VDET Figure 1: Block Diagram 10/2011AWB7227 1 14 VREF GND 2 GND GND 13 3 12 GND RFOUT 4 11 VCC1 VCC2 10 5 GND RFIN 6 9 GND GND 7 8 VDET GND GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VREF Reference Voltage 2 GND Ground 3 GND Ground 4 VCC1 Supply Voltage 5 RFIN RF Input 6 GND Ground 7 VDET Detector Output 8 GND Ground 9 GND Ground 10 GND Ground 11 VCC2 Supply Voltage 12 RFOUT RF Output 13 GND Ground 14 GND Ground PRELIMINARY DATA SHEET - Rev 1.5 2 10/2011